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首页> 外文期刊>Microelectronics & Reliability >Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM)
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Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM)

机译：扫描热显微镜（STHM）研究隧道再生的多有源区发光二极管（TRMAR LED）

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摘要

Scanning Thermal Microscopy (SThM) has been used to map the temperature distribution of two light-emitting regions of a tunnel-regenerated multi-active region (TRMAR) light-emitting diode (LED). These LEDs have a high brightness and quantum efficiency. The temperature profile obtained corresponds to the active regions, where both radiative and non-radiative recombination occur. The heating was found to be higher with low current, which is consistent with the analysis of the linear relation between brightness and current. It was further observed that the reverse tunnel junction has slight temperature rise due to higher resistance at low bias and the current spreading effect.
机译：扫描热显微镜（SThM）已用于绘制隧道再生多有源区（TRMAR）发光二极管（LED）的两个发光区的温度分布图。这些LED具有高亮度和量子效率。获得的温度曲线对应于其中发生辐射和非辐射复合的活性区域。发现在低电流下发热更高，这与分析亮度和电流之间的线性关系一致。进一步观察到，由于在低偏压下的较高电阻和电流扩散效应，反向隧道结具有轻微的温度升高。

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