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首页> 外文期刊>Microwaves, Antennas & Propagation, IET >Analysis and design of a Q/V-band low-noise amplifier in GaAs-based 0.1 µm pHEMT technology
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Analysis and design of a Q/V-band low-noise amplifier in GaAs-based 0.1 µm pHEMT technology

机译：基于GaAs的0.1 µm pHEMT技术的Q / V波段低噪声放大器的分析和设计

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摘要

In this study, the design of a monolithic wideband low-noise amplifier (LNA) is presented and addressed with circuitry and modelling techniques which make it suitable for system integration. Particular emphasis has been dedicated to the interconnections analysis and to the enforcement of the stability characteristics that is usually a crucial point for LNAs. The proposed monolithic microwave integrated circuit (MMIC) amplifier covers the Q/V band showing valuable linear and non-linear characteristics in the full bandwidth from 40 to 51 GHz. The amplifier has been realised with the new 0.1 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process provided by UMS Foundry, and it is suitable for radar and space applications. The LNA shows a noise figure <2 dB, a gain of 16 dB with a 1 dB compression point of 5 dBm. The amplifier is matched at both input and output ports, and also the bond wires are taken into account in the design. The integrability characteristics have been validated with measurements in a dedicated Test-Jig.
机译：在这项研究中，提出了单片宽带低噪声放大器（LNA）的设计，并通过电路和建模技术对其进行了研究，使其适合于系统集成。特别强调互连分析和稳定性特征的实施，这通常是LNA的关键点。拟议的单片微波集成电路（MMIC）放大器覆盖了Q / V频段，在40至51 GHz的全带宽中显示出宝贵的线性和非线性特性。该放大器已采用UMS Foundry提供的新型0.1 µm GaAs伪晶型高电子迁移率晶体管（pHEMT）工艺实现，适用于雷达和太空应用。 LNA的噪声指数<2 dB，增益为16 dB，压缩点为5 dBm，dB为1。放大器在输入和输出端口都匹配，并且在设计中还考虑了键合线。集成性特征已通过专用Test-Jig中的测量进行了验证。

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