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首页> 外文期刊>Microwaves, Antennas & Propagation, IET >Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors
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Broadband complementary metal-oxide semiconductor single-pole-double-throw switch with improved power handling capability using dual-gate metal-oxide semiconductor field-effect transistors

机译：使用双栅金属氧化物半导体场效应晶体管的宽带互补金属氧化物半导体单刀双掷开关具有改进的功率处理能力

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摘要

A broadband complementary metal-oxide semiconductor (CMOS) single-pole-double-throw (SPDT) switch based on a travelling-wave design with using dual-gate N-type metal-oxide semiconductor (NMOS) transistors is implemented in a 0.18 μm CMOS process for millimetre-wave applications. To further investigate the power handling capability in a dual-gate metal-oxide semiconductor field-effect transistor (MOSFET), this study analyses the mechanism of voltage swing distribution by using the proposed large-signal cascode model. Considering the parasitic gate-to-gate capacitance and the substrate effect, the simulations in this study can accurately predict the small-signal and power handling performances of the SPDT switch. The switch exhibits a measured 1 dB bandwidth of ∼51 GHz, ranging from 16 to 67 GHz with an insertion loss of 3.6 dB at 30 GHz. The measured isolation is also better than 22 dB. The measured power handling capability can achieve a 1 dB compression point at an input power of 23.8 dBm at 30 GHz with a negative body bias, and the simulation result shows a 1 dB compression point nearly 24 dBm. Based on the proposed model, the large-signal performances under different body biases can be significantly predicted when including the parasitic gate-to-gate capacitance in a dual-gate MOSFET.
机译：基于行波设计并使用双栅极N型金属氧化物半导体（NMOS）晶体管的宽带互补金属氧化物半导体（CMOS）单刀双掷（SPDT）开关实现在0.18μm的范围内毫米波应用的CMOS工艺。为了进一步研究双栅金属氧化物半导体场效应晶体管（MOSFET）的功率处理能力，本研究使用提出的大信号共源共栅模型分析了电压摆幅分布的机制。考虑到寄生的栅极到栅极电容和衬底效应，本研究中的仿真可以准确预测SPDT开关的小信号和功率处理性能。该开关的测得的1 dB带宽约为51 GHz，范围为16至67 GHz，在30 GHz时的插入损耗为3.6 dB。测得的隔离度也优于22 dB。测得的功率处理能力可在30 GHz的输入功率下以23.8 dBm的输入功率实现1 dB的压缩点，并具有负体偏置，并且仿真结果显示接近24 dBm的1 dB压缩点。基于所提出的模型，当在双栅极MOSFET中包括寄生栅极至栅极电容时，可以显着预测不同体偏置下的大信号性能。

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