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SiGe BiCMOS high-gain and wideband differential intermediate frequency amplifier for W-band passive imaging single-chip receivers

机译：用于W波段无源成像单芯片接收器的SiGe BiCMOS高增益和宽带差分中频放大器

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摘要

This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz /. In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10–19.5 dB at 2–37 GHz (|s| and |s| ≤ −10 dB at 7–40 GHz and 8–35 GHz, respectively), noise figure of 6.3–8.0 dB at 2–26 GHz and output third order intercept points of 7–17 dBm at 1–40 GHz (the DC power consumption is 122 mW). To the authors’ best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s| = 15–19.5 dB at 3–26 GHz).
机译：这项研究提出了针对W波段无源成像单芯片（下变频）接收机前端的高增益和宽带差分中频（IF）放大器电路设计的结果。级联的两级IF放大器采用0.13μmSiGe BiCMOS工艺技术制造，频率为300 GHz / 500 GHz /。在输入，输出和级间匹配网络中总共使用了六个片上电感器，这些电感器实现了相对宽带的RF特性，并为IF放大器提供了紧凑的电路尺寸（芯片面积为0.27 mm，包括RF和DC焊盘） 。宽带SiGe放大器在2–37 GHz时测得的增益为10–19.5 dB（在7–40 GHz和8–35 GHz时分别为| s |和| s |≤-10 dB），噪声系数为6.3–8.0在2–26 GHz时为dB，在1–40 GHz时输出为7–17 dBm的三阶截点（直流功耗为122 mW）。据作者所知，这项工作首次报道了采用0.13μmSiGe BiCMOS技术制成的差分IF放大器的实现，该放大器在宽的瞬时带宽上实现了这种宽带阻抗匹配以及高增益和合理的低噪声特性（ | s | = 3–26 GHz时15–19.5 dB）。

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