About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65-nm CMOS

Fahs Bassem; Wu Kefei; Aouimeur Walid; Mansha Muhammad Waleed; Gaquiere Christophe; Gamand Patrice; Knap Wojciech; Hella Mona M.

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About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65-nm CMOS

机译：约250/285 GHz推挽振荡器，在数字65nm CMOS中使用差分门均衡

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摘要

This study presents a push-push oscillator architecture based on differential gate equalisation to enhance the oscillation frequency while providing relatively high output power with ultra-compact layout form factor. The frequency enhancement is derived as a function of the equivalent RLC model of the oscillator's main constituents. The proposed principle is applied to a terahertz oscillator in the 200-300 GHz range to mitigate the excessive substrate and skin effect losses in standard digital 65-nm complementary metal-oxide-semiconductor technology at such high frequencies. The design concept is validated using two single-stage push-push oscillators. The first oscillator shows -8.1 dBm output power at 250 GHz oscillation frequency and -106.8 dBc/Hz phase noise at 10 MHz offset while consuming 76 mW power from 1.5 V DC supply voltage. The chip area is 200 x 250 mu m(2). The second oscillator provides -14.8 dBm output power at 285 GHz and -106 dBc/Hz phase noise at 10 MHz offset with 80 mW power consumption from 1.5 V DC supply. The chip area is 200 x 200 mu m(2).

机译：这项研究提出了一种基于差分门均衡的推挽振荡器架构，以提高振荡频率，同时以超紧凑的布局尺寸提供相对较高的输出功率。频率增强是根据振荡器主要成分的等效RLC模型得出的。所提出的原理适用于200-300 GHz范围内的太赫兹振荡器，以减轻标准数字65 nm互补金属氧化物半导体技术在如此高的频率下产生的过多衬底和集肤效应损耗。使用两个单级推挽振荡器对设计概念进行了验证。第一个振荡器在250 GHz振荡频率下显示-8.1 dBm输出功率，在10 MHz偏移下显示-106.8 dBc / Hz相位噪声，同时从1.5 V DC电源电压消耗76 mW功率。芯片面积为200 x 250微米（2）。第二个振荡器在285 GHz时提供-14.8 dBm的输出功率，在10 MHz偏移时提供-106 dBc / Hz的相位噪声，而1.5 V DC电源的功耗为80 mW。芯片面积为200 x 200微米（2）。

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来源
《Microwaves, Antennas & Propagation, IET》 |2019年第12期|2073-2080|共8页
作者
Fahs Bassem; Wu Kefei; Aouimeur Walid; Mansha Muhammad Waleed; Gaquiere Christophe; Gamand Patrice; Knap Wojciech; Hella Mona M.;
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作者单位

Rensselaer Polytech Inst Dept Elect Comp & Syst Engn Troy NY 12180 USA;

Univ Lille IEMN F-59652 Villeneuve Dascq France;

Univ Limoges Labex SIGMA LIM XLIM Lab 123 Ave A Thomas F-87060 Limoges France;

Polish Acad Sci Int Res Lab CENTERA Inst High Pressure Phys PL-01142 Warsaw Poland;

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正文语种 eng
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关键词
millimetre wave oscillators; field effect MIMIC; CMOS digital integrated circuits; phase noise; integrated circuit layout; RLC circuits; skin effect; differential gate equalisation; high output power; ultra-compact layout form factor; frequency enhancement; equivalent RLC model; terahertz oscillator; skin effect losses; single-stage push-push oscillators; oscillation frequency; power consumption; digital CMOS; phase noise; standard digital complementary metal-oxide-semiconductor technology; design concept; power 80; 0 mW; voltage 1; 5 V; frequency 200; 0 GHz to 300; 0 GHz; power 76; 0 mW; size 65 nm;

机译：毫米波振荡器;场效应MIMIC;CMOS数字集成电路;相位噪声集成电路布局;RLC电路;皮肤效果差分门均衡;高输出功率;超紧凑的布局尺寸;频率增强;等效的RLC模型;太赫兹振荡器皮肤效应损失;单级推挽振荡器;振荡频率能量消耗;数字CMOS;相位噪声标准数字互补金属氧化物半导体技术;设计理念;电源80;0毫瓦;电压1;5伏;频率200;0 GHz至300;0 GHz;力量76;0毫瓦;尺寸65 nm;

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专利

1. A 340 GHz Triple-Push Oscillator With Differential Output in 40 nm CMOS [J] . Chun-Hsing Li, Chun-Lin Ko, Chien-Nan Kuo, Microwave and Wireless Components Letters, IEEE . 2014,第12期

机译：在40 nm CMOS中具有差分输出的340 GHz三重推挽振荡器
2. 24-GHz Self-Injection-Locked Vital-Sign Radar Sensor With CMOS Injection-Locked Frequency Divider Based on Push–Push Oscillator Topology [J] . Chao-Hsiung Tseng, Yi-Hua Lin Microwave and Wireless Components Letters, IEEE . 2018,第11期

机译：基于推挽振荡器拓扑结构的具有CMOS注入锁定分频器的24 GHz自注入锁定生命体征雷达传感器
3. A 22-GHz push-push CMOS oscillator using micromachined inductors [J] . To-Po Wang, Ren-Chieh Liu, Hong-Yeh Chang, IEEE microwave and wireless components letters . 2005,第12期

机译：使用微机械电感的22 GHz推挽CMOS振荡器
4. A 60 GHz Push-Push Voltage-Controlled Oscillator with Adaptive Gate Biasing in 28 nm Bulk CMOS Technology [C] . Johannes Rimmelspacher, Robert Weigel, Amelie Hagelauer, 2018 IEEE/MTT-S International Microwave Symposium . 2018

机译：具有28 nm体CMOS技术的自适应栅极偏置的60 GHz推压压控振荡器
5. On the conception and analysis of a 12 GHz push-push phase locked dielectric resonator oscillator for broadband wireless applications. [D] . Gravel, Jean-Francois. 2003

机译：关于用于宽带无线应用的12 GHz推挽锁相电介质谐振器振荡器的概念和分析。
6. Pushing the limits of CMOS optical parametric amplifiers with USRN:Si7N3 above the two-photon absorption edge [O] . K. J. A. Ooi, D. K. T. Ng, T. Wang, -1

机译：将USRN：Si7N3的CMOS光学参量放大器的极限推高到双光子吸收边缘之上
7. A monolithic integrated 180 GHz SiGe HBT Push-Push Oscillator. [O] . ROUX P., BAEYENS Y., WOHLGEMUTH O., 2005

机译：单片集成180 GHz SiGe HBT推挽振荡器。
8. 192 GHz Push-Push VCO in 0.13-micrometer CMOS [R] . Cao, C. , Seok, E. , O, K. K. 2006

机译：采用0.13微米CmOs的192 GHz push-push VCO

About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65-nm CMOS

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