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Calculation of effective parameters of high permittivity integrated artificial dielectrics

机译:高介电常数人工合成介质有效参数的计算

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摘要

An analysis is presented of the effective electromagnetic parameters of high-permittivity, anisotropic artificial dielectrics which are built by stacking arrays of metallic elements and conventional dielectric films, with adjacent arrays shifted with respect to each other. The effective parameters of the artificial dielectric are extracted from the scattering coefficients of plane electromagnetic waves which are normally or obliquely incident on a slab of the artificial material with finite thickness. These coefficients are derived from the generalised scattering matrix of a single layer of metallic elements which is computed using the integral equation technique. Both two-dimensional and three-dimensional configurations are considered. Calculations demonstrate the feasibility of artificial dielectric films with extremely high values of effective relative permittivity (several thousands) in the plane of the film at millimetre-wave (mm-wave) frequencies. These artificial dielectrics have a high potential for application in microwave and mm-wave integrated circuits because of their high-permittivity and planar layout. As a potential application, the authors propose an artificial dielectric waveguide integrated on a silicon substrate.
机译:分析了高介电常数的各向异性人工电介质的有效电磁参数,这些参数是通过将金属元素和常规电介质膜的阵列堆叠在一起而形成的,相邻的阵列彼此偏移。人造电介质的有效参数是从平面电磁波的散射系数中提取的,平面电磁波通常或倾斜入射在厚度有限的人造材料的平板上。这些系数来自使用积分方程技术计算的单层金属元素的广义散射矩阵。既考虑了二维配置又考虑了三维配置。计算表明,在毫米波(mm-wave)频率下,在薄膜平面内具有极高的有效相对介电常数(几千)的人造介电薄膜是可行的。这些人造电介质具有高介电常数和平面布局,因此在微波和毫米波集成电路中具有很高的应用潜力。作为一种潜在的应用,作者提出了一种集成在硅衬底上的人工介电波导。

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