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首页> 外文期刊>Microwaves, Antennas & Propagation, IET >24-GHz in-phase/quadrature direct-down converter with integrated quadrature couplers and baluns in standard 0.18 ;C;m cmos technology
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24-GHz in-phase/quadrature direct-down converter with integrated quadrature couplers and baluns in standard 0.18 ;C;m cmos technology

机译：具有集成正交耦合器和巴伦的24 GHz同相/正交直接下变频器，采用标准0.18; C; m cmos技术

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摘要

A novel monolithic CMOS radio frequency (RF) direct-down converter architecture is described, that comprises three miniature quadrature couplers (QCs), three miniature baluns and two sub-harmonic mixers (SHMs) for direct-down conversion. The SHMs in conjunction with the QCs and baluns are used to eliminate local oscillator (LO) self-mixing. The circuit was fabricated in a standard 0.18 ;C;m CMOS process for 24 GHz applications. At an RF of 24 GHz and intermediate frequency (IF) of 100 MHz, the RF direct-down converter exhibits an amplitude mismatch of only 0.6 dB, a phase mismatch of only 3.53u000b0;, a voltage gain of 1.5 dB, and an third-order input intercept point (IIP3) of 6.5 dBm while dissipating 10.05 mW from a 1.5 V supply. In addition, excellent isolations were also achieved. The corresponding LO-to-IF, RF-to-IF, LO-to-RF and 2LO-to-RF isolations are 45.7, 46.5, 61.1 and 60 dB, respectively, at 24 GHz. The chip area was only 1.017 ?? 0.717 mm2, that is, 0.729 mm2, excluding the test pads.
机译：描述了一种新颖的单片CMOS射频（RF）直下转换器架构，该架构包括用于直接下变频的三个微型正交耦合器（QC），三个微型巴伦和两个次谐波混频器（SHM）。 SHM与QC和巴伦一起用于消除本地振荡器（LO）自混音。该电路采用标准的0.18; C; m CMOS工艺制造，用于24 GHz应用。在24 GHz的RF和100 MHz的中频（IF）时，RF直下式转换器的振幅失配仅为0.6 dB，相位失配仅为3.53u000b0；电压增益为1.5 dB，第三6.5 dBm的高阶输入截取点（IIP3），而从1.5 V电源消耗10.05 mW的功率。此外，还实现了出色的隔离。在24 GHz时，相应的LO至IF，RF至IF，LO至RF和2LO至RF隔离分别为45.7、46.5、61.1和60 dB。芯片面积仅为1.017 ?? 0.717 mm2，即0.729 mm2，不包括测试垫。

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