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首页> 外文期刊>Molecular Crystals and Liquid Crystals >Electrical and Optical Properties of Cd2SnO4 Thin Film Depending on its Chemical Bond
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Electrical and Optical Properties of Cd2SnO4 Thin Film Depending on its Chemical Bond

机译：Cd 2 SnO 4 薄膜的电学和光学性质取决于其化学键

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摘要

Cd2SnO4(CTO) thin film was made using RF magnetron sputtering and a single (CTO) target. Among various deposition variables, the effect of changes in plasma power on the electrical and optical properties of the film was investigated. It was observed, as plasma power grows, specific resistivity of the thin film increases while transmittance considerably decreases. It was found that such a phenomenon occurred because of the density of the thin film reduced by increased deposition speed. Another noteworthy result obtained through the X-ray photoelectron spectroscopy analysis is that Sn has metallic bond in the case of the thin film deposited under high power. It seems that existence of such metal was another cause of the reduced transmittance of the thin film.
机译：Cd 2 SnO 4 （CTO）薄膜是使用RF磁控溅射和单个（CTO）靶制成的。在各种沉积变量中，研究了等离子体功率变化对薄膜电学和光学性质的影响。观察到，随着等离子功率的增长，薄膜的电阻率增加而透射率显着降低。发现这种现象是由于沉积速度增加而使薄膜的密度降低而发生的。通过X射线光电子能谱分析获得的另一个值得注意的结果是，在以高功率沉积薄膜的情况下，Sn具有金属键。看来这种金属的存在是薄膜透射率降低的另一个原因。

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