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首页> 外文期刊>Molecular Crystals and Liquid Crystals >Synthesis of CuInS2 Thin Film for Solar Cells by a New Solution-based Deposition Method
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Synthesis of CuInS2 Thin Film for Solar Cells by a New Solution-based Deposition Method

机译：基于溶液沉积的新型CuInS 2 薄膜太阳能电池的合成

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Polycrystalline copper indium disulphide (CuInS2) thin films were synthesized by a modified spin coating process with spraying the solutions containing precursor materials. Spin-spray deposition was performed at 25°C. The as-deposited CuInS2 thin films were annealed at 400°C for 1 hour under nitrogen atmospheric condition. A scanning electron microscope (SEM) was employed to examine the surface morphology of the polycrystalline CuInS2 thin films. The optical properties were measured using a UV-visible spectrophotometer. Their energy band gap was 2.0 eV. An X-ray diffraction spectrometer (XRD) was used for the structural analysis of CuInS2 thin films. The chemical composition of the CuInS2 thin film was studied with the aid of X-ray photoelectron spectroscope (XPS). The atomic concentrations of copper, indium, and sulfur in the film were determined from energy dispersive spectroscopy (EDS) measurements as a function of the Cu/In ratio in the aqueous precursor solutions.
机译：通过改进的旋涂工艺，喷涂含前驱体材料的溶液，合成了多晶二硫化铜铟（CuInS 2 ）薄膜。自旋喷涂沉积在25°C。沉积的CuInS 2 薄膜在氮气气氛下于400°C退火1小时。用扫描电子显微镜（SEM）观察了CuInS 2 多晶薄膜的表面形貌。光学性质使用紫外可见分光光度计测量。它们的能带隙为2.0 eV。用X射线衍射光谱仪（XRD）对CuInS 2 薄膜的结构进行了分析。利用X射线光电子能谱仪（XPS）研究了CuInS 2 薄膜的化学成分。薄膜中铜，铟和硫的原子浓度是根据能量分散光谱（EDS）测量确定的，作为前驱体水溶液中Cu / In比的函数。

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