...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Multidiscipline modeling in materials and structures >On increasing of density of transistors in a hybrid cascaded multilevel inverter
【24h】

On increasing of density of transistors in a hybrid cascaded multilevel inverter

机译：关于混合级联多电平逆变器中晶体管密度的增加

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Purpose - The purpose of this paper is to analytically model redistribution of dopant in a heterostructure during annealing of dopant and/or radiation defects (during the modeling, the authors consider two types of infusing of the dopant: dopant diffusion and ion implantation). The authors consider a heterostructure, which consists of a substrate and an epitaxial layer. After that the authors consider doping of several specific areas to manufacture heterodiodes and heterobipolar transistors framework hybrid cascaded multilevel inverter. Design/methodology/approach - Based on the modeling, the authors introduce an approach to increase density of diodes and bipolar transistors framework hybrid cascaded multilevel inverter, which has been manufactured based on the heterostructure. The approach is based on using inhomogeneity of the heterostructure and optimization of annealing of dopant and/or radiation defects. Findings - The approach gives us possibility to take into account nonlinearity of considered processes. Originality/value - The authors introduce an analytical approach to model diffusion and ion types of doping with account concurrent changing of parameters in space and time.
机译：目的-本文的目的是分析掺杂剂和/或辐射缺陷退火过程中异质结构中掺杂剂的重新分布（在建模过程中，作者考虑了两种类型的掺杂剂注入：掺杂剂扩散和离子注入）。作者考虑了由衬底和外延层组成的异质结构。之后，作者考虑对几个特定区域进行掺杂，以制造异质二极管和异质双极晶体管框架混合级联多电平逆变器。设计/方法/方法-基于建模，作者介绍了一种基于异质结构制造的增加二极管和双极晶体管框架混合级联多电平逆变器密度的方法。该方法基于使用异质结构的不均匀性和优化掺杂剂和/或辐射缺陷的退火。发现-该方法使我们有可能考虑所考虑过程的非线性。原创性/价值-作者介绍了一种分析方法，用于模拟掺杂的扩散和离子类型，同时考虑了时空参数的同时变化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号