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NANO-DRILLING PROCESSING WITH TEM

机译：TEM纳米钻孔加工

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摘要

For investigating the fabrication of nanoporouses with the aid of TEM, the intensity of the TEM electron beam on the substrate of silicon nitride Si3N4 film has been regulated. By various thicknesses of 30 nm, 75 nm, 100 nm and 100 nm plus the gold-coated film of 20 nm and the aluminum-coated film of 50 nm respectively, single or multi-nanometer holes with the high precision between few and 20 nm have been fabricated. Furthermore, innovation processing for nano-wires has been also realized. The proposed processing technique would be capable of being utilized for different fields involved in nanomaterial processing. For minimizing random measurement errors, three same holes have been drilled, their diameters were measured and then the average of these diameters was regarded as the corresponding experimental result. Under different magnifications of 20k to 500k, the results revealed that there would be the regular relationship between fastest perforation and film thickness. With the Si3N4 film thickness of 30 nm, the perforation time will be declined from 73 to 66 seconds and the diameters of the holes punched vary diminishingly from 13 nm to 8 nm while the magnifications are altered from 250k to 500k. In case of the Si3N4 film thickness of 75 nm, the perforation time will be raised from 69 to 77 seconds but the diameters of the holes punched is reduced from 13 nm to 8 nm during the magnifications altered from 250k to 500k. When the film thickness is increased to 100 nm, the perforation time will be increased from 68 to 83 seconds and the diameters of the holes punched sink dramatically from 38 nm to 2 nm with the magnifications enhanced from 150k to 500k. For the Si3N4 film thickness of 100 nm plus the gold-coated film of 20 nm, the perforation time will vary from 83 to 102 seconds and the diameters of the holes punched drop from 12 nm to 1nm at the magnifications regulated from 250k to 400k. For the Si3N4 film thickness of 100 nm plus aluminum-coated film of 50 nm, the perforation time will rise from 92 to 110 seconds and the diameters of the holes punched drop from 12 nm tolnm at the magnifications regulated from 250k to 500k. From the above results, it can be summarized that the substrate thickness of 100 nm should be considered if holes with the diameters less than 2 nm need to be fabricated. The processing time will be significantly raised for thicker substrates. And the penetration of the electron beam becomes more difficult and the positioning on the film cannot be attained. That will lead to the failure of the nano-drilling processing. Especially, innovative TEM serving as the processing tool has been demonstrated. Originally it is only possesses the performance of observation. By the integration with the processing and measuring capability developed in this innovative design investigation, it can be enhanced to a trinary multi-functional TEM with the characteristics of the observation, processing and measurement. By the optimal magnification of 500k for processing nanoholes developed in this study, the novel TEM for fabricating nanoholes and nanowires is realizable and available. With this equipment, the fabricating efficiency will be enhanced and the cost can be obviously reduced. It would be beneficial for the automatization of nano processing technology and the domestic-made capability of nanoholes and nanowires.
机译：为了研究借助于TEM的纳米孔的制造，已经调节了氮化硅Si 3 N 4膜的基底上的TEM电子束的强度。通过分别具有30 nm，75 nm，100 nm和100 nm的各种厚度加上20 nm的金涂层膜和50 nm的铝涂层膜，可以在几到20 nm之间高精度地形成单纳米或多纳米孔已经被捏造了。此外，还实现了纳米线的创新处理。所提出的加工技术将能够用于纳米材料加工所涉及的不同领域。为了使随机测量误差最小，已钻了三个相同的孔，测量了它们的直径，然后将这些直径的平均值视为相应的实验结果。结果表明，在20k至500k的不同放大倍数下，最快的穿孔和膜厚之间将存在规则的关系。当Si3N4膜厚度为30 nm时，穿孔时间将从73秒减少到66秒，打孔的直径从13 nm减小到8 nm，而放大倍数从250k变为500k。如果Si3N4膜厚度为75 nm，则穿孔时间将从69秒增加到77秒，但是在将放大倍数从250k更改为500k时，打孔的直径从13 nm减小为8 nm。当膜厚增加到100 nm时，穿孔时间将从68秒增加到83秒，打孔的直径从38 nm急剧下降到2 nm，并且放大倍数从150k增加到500k。对于100 nm的Si3N4膜厚度加上20 nm的镀金膜，穿孔时间将在83到102秒之间变化，并且在250k到400k的放大倍数下，打孔的直径从12 nm下降到1nm。对于100 nm的Si3N4膜厚度加上50 nm的铝涂层膜，穿孔时间将从92秒增加到110秒，在放大倍数下，打孔的直径从12 nm降低到1nm，从250k调整到500k。根据以上结果，可以总结出，如果需要制造直径小于2nm的孔，则应考虑100nm的基板厚度。对于较厚的基板，处理时间将大大增加。并且电子束的穿透变得更加困难并且不能实现在膜上的定位。这将导致纳米钻孔处理的失败。特别是，已经证明了创新的TEM作为加工工具。本来它只是具有观察的性能。通过与本创新设计调查中开发的处理和测量功能相集成，可以将其增强为具有观察，处理和测量特性的三元多功能TEM。通过这项研究中开发的用于处理纳米孔的500k最佳放大倍率，用于制造纳米孔和纳米线的新型TEM得以实现并可用。使用该设备，可以提高制造效率并且可以明显降低成本。这将有利于纳米加工技术的自动化以及纳米孔和纳米线的国产化能力。

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  • 来源
    《Nanotechnology research journal》 |2016年第4期|467-495|共29页
  • 作者

    Tsan-Chu Lin; Yung-Cheng Wang; Dau-Chung Wang; Chin-Wei Lin;

  • 作者单位

    Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Yunlin, Taiwan;

    Institute of Mechanical Engineering, National Yunlin University of Science and Technology, Yunlin, Taiwan;

    Institute of Mechanical Engineering, National Yunlin University of Science and Technology, Yunlin, Taiwan;

    Institute of NanoScience, National Chung-Hsing University, Taichung, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanoporous; nanowire; TEM; nano-fabrication;

    机译：Nanoporo s;Nanoville;M;Nanofab Rikkachion;

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