Opportunities and challenges for spintronics in the microelectronics industry

Dieny B.; Prejbeanu I. L.; Garello K.; Gambardella P.; Freitas P.; Lehndorff R.; Raberg W.; Ebels U.; Demokritov S. O.; Akerman J.; Deac A.; Pirro P.; Adelmann C.; Anane A.; Chumak A. V.; Hirohata A.; Mangin S.; Valenzuela Sergio O.; Onbasli M. Cengiz; DAquino M.; Prenat G.; Finocchio G.; Lopez-Diaz L.; Chantrell R.; Chubykalo-Fesenko O.; Bortolotti P.

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Opportunities and challenges for spintronics in the microelectronics industry

机译：微电子工业中闪蒸的机遇与挑战

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This Review Article examines the potential of spintronics in four key areas of application -memories, sensors, microwave devices, and logic devices - and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry. We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices. We also discuss the challenges-at both the device and the system level-that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.

机译：该审查文章研究了应用 - 汞，传感器，微波设备和逻辑器件的四个关键领域的闪光灯的潜力 - 并讨论了所需的挑战，以便将旋转反应材料和功能集成到主流微电子平台中。专员设备利用旋转，以及电子的旋转和电荷可以为微电子工业带来新功能。但是，为了使旋转式设备满足行业的不断增长的需求，需要在材料，过程和电路方面创新。在这里，我们审查了最近的闪闪发光的发展，很快就会对微电子和信息技术产业产生影响。我们突出显示并探索四个关键区域：磁存储器，磁传感器，射频和微波器件以及逻辑和非布尔设备。我们还讨论了设备和系统级别的挑战 - 需要解决，以便将闪光材料和功能集成到主流微电子平台上。

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《Nature Electronics》 |2020年第8期|446-459|共14页
作者
Dieny B.; Prejbeanu I. L.; Garello K.; Gambardella P.; Freitas P.; Lehndorff R.; Raberg W.; Ebels U.; Demokritov S. O.; Akerman J.; Deac A.; Pirro P.; Adelmann C.; Anane A.; Chumak A. V.; Hirohata A.; Mangin S.; Valenzuela Sergio O.; Onbasli M. Cengiz; DAquino M.; Prenat G.; Finocchio G.; Lopez-Diaz L.; Chantrell R.; Chubykalo-Fesenko O.; Bortolotti P.;
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Univ Grenoble Alpes CNRS CEA Grenoble INP IRIG SPINTEC Grenoble France;

Univ Grenoble Alpes CNRS CEA Grenoble INP IRIG SPINTEC Grenoble France;

IMEC Leuven Belgium;

Swiss Fed Inst Technol Dept Mat Lab Magnetism & Interface Phys Zurich Switzerland;

Int Iberian Nanotechnol Lab INL Braga Portugal|Inst Engn Sistemas & Computadores Microsistemas & Lisbon Portugal;

Sensitec GmbH Mainz Germany;

Infineon Technol AG Neubiberg Germany;

Univ Grenoble Alpes CNRS CEA Grenoble INP IRIG SPINTEC Grenoble France;

Univ Munster Inst Appl Phys Munster Germany;

Univ Gothenburg Dept Phys Gothenburg Sweden|KTH Royal Inst Technol Sch Engn Sci Dept Appl Phys Stockholm Sweden;

Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys & Mat Res Dresden Germany;

Tech Univ Kaiserslautern Fachbereich Phys & Landesforschungszentrum OPTIMA Kaiserslautern Germany;

Univ Paris Saclay Univ Paris Sud CNRS Thales Unite Mixte Phys Palaiseau France;

Tech Univ Kaiserslautern Fachbereich Phys & Landesforschungszentrum OPTIMA Kaiserslautern Germany|Univ Vienna Fac Phys Vienna Austria;

Univ York Dept Elect Engn Heslington England;

Univ Lorraine Inst Jean Lamour Nancy France|CSIC Catalan Inst Nanosci & Nanotechnol ICN2 Campus UAB Barcelona Spain;

BIST Campus UAB Barcelona Spain|ICREA Inst Catalana Recerca & Estudis Avancats Barcelona Spain;

Koc Univ Istanbul Turkey;

Univ Naples Parthenope Dept Engn Naples Italy;

Univ Grenoble Alpes CNRS CEA Grenoble INP IRIG SPINTEC Grenoble France;

Univ Messina Dept Math & Comp Sci Phys Sci & Earth Sci Messina Italy;

Univ Salamanca Dept Appl Phys Salamanca Spain;

Univ York Dept Phys Heslington England;

CSIC Inst Ciencia Mat Madrid Madrid Spain;

Univ Vienna Fac Phys Vienna Austria;

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3. Beyond CMOS: Challenges and Opportunities - Major Trends in Microelectronics for the Coming Decades [J] . Adrian M. IONESCU, Kirsten E. MOSELUND Revue de l'electricite et de l'electronique . 2007,第8期

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4. Heteroepitaxial Growth of Sn-related Group-Ⅳ Materials on Si Platform for Microelectronic and Optoelectronic Applications: Challenges and Opportunities [C] . Osamu Nakatsuka, Noriyuki Taoka, Takanori Asano, Symposium on ULSI process integration;Meeting of the Electrochemical Society . 2013

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Opportunities and challenges for spintronics in the microelectronics industry

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