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Dynamic band-structure tuning of graphene moire superlattices with pressure

机译:压力下石墨烯云纹超晶格的动态能带结构调谐

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摘要

Heterostructures can be assembled from atomically thin materials by combining a wide range of available van der Waals crystals, providing exciting possibilities for designer electronics'. In many cases, beyond simply realizing new material combinations, interlayer interactions lead to emergent electronic properties that are fundamentally distinct from those of the constituent layers'. A critical parameter in these structures is the interlayer coupling strength, but this is often not easy to determine and is typically considered to be a fixed property of the system. Here we demonstrate that we can controllably tune the interlayer separation in van der Waals heterostructures using hydrostatic pressure, providing a dynamic way to modify their electronic properties. In devices in which graphene is encapsulated in boron nitride and aligned with one of the encapsulating layers, we observe that increasing pressure produces a superlinear increase in the moire-superlattice-induced bandgap nearly doubling within the studied range together with an increase in the capacitive gate coupling to the active channel by as much as 25 per cent. Comparison to theoretical modelling highlights the role of atomic-scale structural deformations and how this can be altered with pressure. Our results demonstrate that combining hydrostatic pressure with controlled rotational order provides opportunities for dynamic band-structure engineering in van der Waals heterostructures.
机译:异质结构可以通过结合多种可用的范德华晶体,由原子薄的材料组装而成,为设计师电子产品提供了令​​人兴奋的可能性。在许多情况下,除了简单地实现新的材料组合之外,层间相互作用还导致了新兴的电子特性,这些电子特性与构成层的电子特性根本不同。这些结构中的一个关键参数是层间耦合强度,但这通常不容易确定,通常被认为是系统的固定属性。在这里,我们证明了我们可以使用静水压力可控地调节范德华异质结构中的层间分离,从而提供了一种动态方式来修改其电子性能。在将石墨烯封装在氮化硼中并与其中一个封装层对齐的器件中,我们观察到,压力的增加会导致莫尔-超晶格感应带隙的超线性增加,在研究范围内几乎翻倍,同时电容性栅极也增加耦合到活动通道最多25%。与理论模型的比较突出了原子级结构变形的作用以及如何通过压力改变这种变形。我们的结果表明,静水压力与受控的旋转顺序相结合,为范德华异质结构中的动态能带结构工程提供了机会。

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  • 来源
    《Nature》 |2018年第7705期|404-408|共5页
  • 作者单位

    Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA;

    Univ Seoul, Dept Phys, Seoul, South Korea;

    Natl Univ Singapore, Ctr Adv Mat 2d, Singapore, Singapore;

    Univ Seoul, Dept Phys, Seoul, South Korea;

    Univ Seoul, Dept Phys, Seoul, South Korea;

    Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan;

    Natl Inst Mat Sci, Tsukuba, Ibaraki, Japan;

    Natl Univ Singapore, Ctr Adv Mat 2d, Singapore, Singapore;

    Natl High Magnet Field Lab, Tallahassee, FL USA;

    Columbia Univ, Dept Phys, 538 W 120th St, New York, NY 10027 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
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