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首页> 外文期刊>Nature >Electron ptychography of 2D materials to deep sub-angstrom resolution
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Electron ptychography of 2D materials to deep sub-angstrom resolution

机译：二维材料的电子分型仪可实现深亚埃分辨率

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摘要

Aberration-corrected optics have made electron microscopy at atomic resolution a widespread and often essential tool for characterizing nanoscale structures. Image resolution has traditionally been improved by increasing the numerical aperture of the lens (alpha) and the beam energy, with the state-of-the-art at 300 kiloelectronvolts just entering the deep sub-angstrom (that is, less than 0.5 angstrom) regime. Two-dimensional (2D) materials are imaged at lower beam energies to avoid displacement damage from large momenta transfers, limiting spatial resolution to about 1 angstrom. Here, by combining an electron microscope pixel-array detector with the dynamic range necessary to record the complete distribution of transmitted electrons and full-field ptychography to recover phase information from the full phase space, we increase the spatial resolution well beyond the traditional numerical-aperture-limited resolution. At a beam energy of 80 kiloelectronvolts, our ptychographic reconstruction improves the image contrast of single-atom defects in MoS2 substantially, reaching an information limit close to 5 alpha, which corresponds to an Abbe diffraction-limited resolution of 0.39 angstrom, at the electron dose and imaging conditions for which conventional imaging methods reach only 0.98 angstrom.
机译：像差校正光学器件已使原子分辨率的电子显微镜成为表征纳米级结构的广泛且通常必不可少的工具。传统上，通过增加透镜的数值孔径（α）和光束能量来提高图像分辨率，而300千伏的最新技术刚好进入了深亚埃（即小于0.5埃）政权。二维（2D）材料在较低的光束能量下成像，以避免大动量转移对位移造成的损害，从而将空间分辨率限制在1埃左右。在这里，通过将电子显微镜像素阵列检测器与记录透射电子的完整分布所必需的动态范围和全场声谱图技术相结合，以从全相空间中恢复相信息，我们可以将空间分辨率提高到远远超出传统的数值计算范围。光圈受限的分辨率。在80千伏的电子束能量下，我们的谱图重建技术显着提高了MoS2中单原子缺陷的图像对比度，在电子剂量下达到了接近5 alpha的信息极限，这相当于0.39埃的阿贝衍射极限分辨率常规成像方法只能达到0.98埃的成像条件。

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  • 来源
    《Nature》 |2018年第7714期|343-349|共7页
  • 作者

    Jiang Yi; Chen Zhen; Hang Yimo; Deb Pratiti; Gao Hui; Xie Saien; Purohit Prafull; Tate Mark W.; Park Jiwoong; Gruner Sol M.; Elser Veit; Muller David A.;

  • 作者单位

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

    Univ Chicago, James Franck Inst, Dept Chem, Inst Mol Engn, Chicago, IL 60637 USA;

    Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

    Univ Chicago, James Franck Inst, Dept Chem, Inst Mol Engn, Chicago, IL 60637 USA;

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Dept Phys, Ithaca, NY 14853 USA;

    Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA;

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