Calculations in this Letter and in ref.2 are sensitive to the dipole matrix elements, Z_(vi,cj) (i,j = 1,2), describing the transitions between the two uppermost valence (v1 and v2) and two lowest conduction (c1 and c2) bands (see Supplementary Information to ref. 1). They have resulted in good agreement with all observations ofboth experiments for Z_(v1,c1) =3 A, Z_(v1,v2)=Z_(c1,c2) =2 Aand Z_(v2,c2)= 0. By mistake, Fig. 1b and Supplementary Fig. 4 of ref. 1 show adiabatic levels of silica for Z_(v1,c1) = 1 A (Z_(v1,v2),Z_(c1,c2) and Z_(v2,c2) are correct and set as above). Here we correct this error in Fig. 1 by plotting the adiabatic levels of silica for the value of Z_(v1,c1) = 3 A that we actually used. This corrected level diagram prompts a correction of the qualitative picture mediated by Fig. 1b and Supplementary Figs 4 and 6 of ref. 1, aiming at a qualitative insight of the strong-field optical phenomena reported in refs 1 and 2. The corrected picture suggests an analogy to a phenomenon known in semiconductor physics for more than two decades. We summarize these findings below. The experimental and quantitative results presented in refs 1 and 2 stand as published, as do the conclusions derived directly from them.
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机译：该字母和参考文献2中的计算对偶极矩阵元素Z_（vi，cj）（i，j = 1,2）敏感，描述了两个最高价（v1和v2）和两个最低导通之间的过渡（c1和c2）频段（请参阅参考资料1的补充信息）。他们与Z_（v1，c1）= 3 A，Z_（v1，v2）= Z_（c1，c2）= 2 A and Z_（v2，c2）= 0的所有实验的观察结果都很好地吻合。参考文献的图1b和补充图4。图1显示了对于Z_（v1，c1）＝ 1A（Z_（v1，v2），Z_（c1，c2）和Z_（v2，c2）是正确的并且如上设置）的二氧化硅的绝热水平。在这里，我们通过画出我们实际使用的Z_（v1，c1）= 3 A值的绝热水平来校正图1中的误差。该校正后的电平图促使对图1b和参考文献的补充图4和6所调解的定性图像进行校正。 1，旨在对参考文献1和2中报告的强磁场光学现象进行定性分析。校正后的图片暗示了与二十多年以来半导体物理学中已知现象的类比。我们在下面总结这些发现。引用文献1和2中给出的实验和定量结果与直接得出的结论一样，均与发布相同。
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