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Deterministic switching of ferromagnetism at room temperature using an electric field

机译:使用电场确定性地在室温下切换铁磁性

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摘要

多铁材料的吸引力在于这样一个事实:它们的磁性可以利用电场来控制。但存在一个实际问题:热力学观点认为,在技术上最希望得到的磁化切换形式(180°的完全逆转)是被禁止的。现在,John Heron及同事通过理论和实验都证明,这一明显根本性的障碍可以通过考虑切换过程的动力学问题被克服。尤其是,他们演示,完全的磁化逆转可以利用由两个步骤组成的一个部分切换事件序列以电的方式诱导产生。这一发现为将电磁切换引入到在技术上有用的纳米尺度的低能耗、非易失电磁装置中提出了可能的途径。%The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO_3. Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.
机译:多铁材料的吸引力在于这样一个事实:它们的磁性可以利用电场来控制。但存在一个实际问题:热力学观点认为,在技术上最希望得到的磁化切换形式(180°的完全逆转)是被禁止的。现在,John Heron及同事通过理论和实验都证明,这一明显根本性的障碍可以通过考虑切换过程的动力学问题被克服。尤其是,他们演示,完全的磁化逆转可以利用由两个步骤组成的一个部分切换事件序列以电的方式诱导产生。这一发现为将电磁切换引入到在技术上有用的纳米尺度的低能耗、非易失电磁装置中提出了可能的途径。%The technological appeal of multiferroics is the ability to control magnetism with electric field. For devices to be useful, such control must be achieved at room temperature. The only single-phase multiferroic material exhibiting unambiguous magnetoelectric coupling at room temperature is BiFeO_3. Its weak ferromagnetism arises from the canting of the antiferromagnetically aligned spins by the Dzyaloshinskii-Moriya (DM) interaction. Prior theory considered the symmetry of the thermodynamic ground state and concluded that direct 180-degree switching of the DM vector by the ferroelectric polarization was forbidden. Instead, we examined the kinetics of the switching process, something not considered previously in theoretical work. Here we show a deterministic reversal of the DM vector and canted moment using an electric field at room temperature. First-principles calculations reveal that the switching kinetics favours a two-step switching process. In each step the DM vector and polarization are coupled and 180-degree deterministic switching of magnetization hence becomes possible, in agreement with experimental observation. We exploit this switching to demonstrate energy-efficient control of a spin-valve device at room temperature. The energy per unit area required is approximately an order of magnitude less than that needed for spin-transfer torque switching. Given that the DM interaction is fundamental to single-phase multiferroics and magnetoelectrics, our results suggest ways to engineer magnetoelectric switching and tailor technologically pertinent functionality for nanometre-scale, low-energy-consumption, non-volatile magnetoelectronics.

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  • 来源
    《Nature》 |2014年第7531期|370-373B1|共5页
  • 作者单位

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA;

    Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269, USA;

    Department of Physics, Durham University, Durham DH1 3LE, UK;

    Department of Physics, University of California, Berkeley, California 94720, USA,School of Materials Science and Engineering, and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China;

    Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4 10, 8093 Zurich, Switzerland;

    Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269, USA;

    Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;

    Department of Physics, Cornell University, Ithaca, New York 14853, USA;

    Department of Physics, University of California, Berkeley, California 94720, USA;

    Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720, USA;

    Department of Physics, Cornell University, Ithaca, New York 14853, USA,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA;

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA,Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA;

    Institut de Ciencia de Materials de Barcelona(ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Spain;

    Department of Materials Science and Engineering, University of Connecticut, Storrs, Connecticut 06269, USA,Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, USA;

    Department of Physics, University of California, Berkeley, California 94720, USA,Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA,Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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