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A graphene-based broadband optical modulator

机译：基于石墨烯的宽带光调制器

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摘要

Integrated optical modulators with high modulation speed, small footprint and large optical bandwidth are poised to be the enabling devices for on-chip optical interconnects~(1,2). Semiconductor modulators have therefore been heavily researched over the past few years. However, the device footprint of silicon-based modulators is of the order of millimetres, owing to its weak electro-optical properties~3. Germanium and compound semiconductors, on the other hand, face the major challenge of integration with existing silicon electronics and photonics platforms~(4-6). Integrating silicon modulators with high-quality-factor optical resonators increases the modulation strength, but these devices suffer from intrinsic narrow bandwidth and require sophisticated optical design; they also have stringent fabrication requirements and limited temperature tolerances~7. Finding a complementary metal-oxide-semiconductor (CMOS)-compatible material with adequate modulation speed and strength has therefore become a task of not only scientific interest, but also industrial importance. Here we experimentally demonstrate a broadband, high-speed, waveguide-integrated electroabsorption modulator based on monolayer graphene. By electrically tuning the Fermi level of the graphene sheet, we demonstrate modulation of the guided light at frequencies over 1 GHz, together with a broad operation spectrum that ranges from 1.35 to 1.6 μm under ambient conditions. The high modulation efficiency of graphene results in an active device area of merely 25 μm~2, which is among the smallest to date. This graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.
机译：具有高调制速度，小占位面积和大光带宽的集成光调制器有望成为片上光互连的使能设备[1,2]。因此，在过去的几年中对半导体调制器进行了广泛的研究。然而，基于硅的调制器的器件占地面积约为毫米，这是由于其弱的电光特性〜3。另一方面，锗和化合物半导体面临与现有硅电子和光子学平台集成的主要挑战〜（4-6）。将硅调制器与高品质因数光学谐振器集成在一起可以提高调制强度，但是这些设备的固有带宽很窄，需要复杂的光学设计。它们还具有严格的制造要求和有限的温度公差〜7。因此，找到具有足够的调制速度和强度的互补金属氧化物半导体（CMOS）兼容材料已成为一项不仅具有科学意义而且具有工业重要性的任务。在这里，我们通过实验演示了一种基于单层石墨烯的宽带，高速，集成波导的电吸收调制器。通过电调石墨烯片的费米能级，我们证明了在1 GHz以上的频率下对导光的调制，以及在环境条件下范围为1.35至1.6μm的宽工作光谱。石墨烯的高调制效率导致有源器件面积仅为25μm〜2，是迄今为止最小的有源器件。这种基于石墨烯的光调制机制具有紧凑的占位面积，低的工作电压以及在很宽的波长范围内超快的调制速度等优点，可以为片上光通信提供新颖的架构。

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  • 来源
    《Nature》 |2011年第7349期|p.64-67|共4页
  • 作者

    Ming Liu; Xiaobo Yin; Erick Ulin-Avila; Baisong Geng; Thomas Zentgraf; Long Ju; Feng Wang; Xiang Zhang;

  • 作者单位

    NSF Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720, USA;

    NSF Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720, USA;

    NSF Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720, USA;

    Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA;

    NSF Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720, USA;

    Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA;

    Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;

    NSF Nano-scale Science and Engineering Center (NSEC), 3112 Etcheverry Hall, University of California at Berkeley, Berkeley, California 94720, USA,Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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