Tunnel field-effect transistors as energy-efficient electronic switches

Adrian M. Ionescu; Heike Riel

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Tunnel field-effect transistors as energy-efficient electronic switches

机译：隧道场效应晶体管作为节能电子开关

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Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60mV of gate voltage to increase the current by one order of magnitude at room temperature. Tunnel FETs avoid this limit by using quantum-mechanical band-to-band tunnelling, rather than thermal injection, to inject charge carriers into the device channel. Tunnel FETs based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal-oxide-semiconductor (CMOS) transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.

机译：功耗是纳米电子电路的基本问题。调整电源电压可以降低开关所需的能量，但是当今集成电路中的场效应晶体管（FET）至少需要60mV的栅极电压，才能在室温下将电流增加一个数量级。隧道FET通过使用量子力学的带间隧道技术而不是热注入技术将电荷载流子注入器件通道，从而避免了这一限制。基于超薄半导体膜或纳米线的隧道FET可以比互补金属氧化物半导体（CMOS）晶体管降低100倍的功耗，因此将隧道FET与CMOS技术集成在一起可以改善低功耗集成电路。

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《Nature》 |2011年第7373期|p.329-337|共9页
作者
Adrian M. Ionescu; Heike Riel;
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作者单位

Ecole Polytechnique Federale Lausanne, 1015 Lausanne, Switzerland;

IBM Research-Zurich, 8803 Ruschlikon, Switzerland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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正文语种 eng
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2. Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches [J] . Kim Seungho, Myeong Gyuho, Shin Wongil, Nature nanotechnology . 2020,第3期

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3. Polymer Electrolyte-Gated Organic Field-Effect Transistors: Low-Voltage, High-Current Switches for Organic Electronics and Testbeds for Probing Electrical Transport at High Charge Carrier Density [J] . Matthew J. Panzer, C. Daniel Frisbie Journal of the American Chemical Society . 2007,第20期

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4. Si-based tunnel field-effect transistors for low-power nano-electronics [C] . Verhulst A.S., Vandenberghe W.G., Leonelli D., 2011 69th Annual Device Research Conference . 2011

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5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
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7. Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches [O] . Seungho Kim, Gyuho Myeong, Wongil Shin, 2020

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8. Development and Study of Molecular Electronic Switches and their Field-Effect Transistor (FET) Device Properties. [R] . Yamaguchi, K., Kim, B. 2015

机译：分子电子开关及其场效应晶体管（FET）器件特性的开发与研究。

Tunnel field-effect transistors as energy-efficient electronic switches

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