• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nature >Coherent control of Rydberg states in silicon
【24h】

Coherent control of Rydberg states in silicon

机译：硅中里德堡态的相干控制

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding dramatic discoveries ranging from Bose-Einstein condensation to the quantum control of single atoms. Of particular interest, because they can be used in the quantum control of one atom by another, are excited Rydberg states, where wavefunctions are expanded from their ground-state extents of less than 0.1 nm to several nanometres and even beyond; this allows atoms far enough apart to be non-interacting in their ground states to strongly interact in their excited states. For eventual application of such states, a solid-state implementation is very desirable. Here we demonstrate the coherent control of impurity wavefunctions in the most ubiquitous donor in a semiconductor, namely phosphorus-doped silicon. In our experiments, we use a free-electron laser to stimulate and observe photon echoes, the orbital analogue of the Hahn spin echo, and Rabi oscillations familiar from magnetic resonance spectro-scopy. As well as extending atomic physicists' explorations of quantum phenomena to the solid state, our work adds coherent terahertz radiation, as a particularly precise regulator of orbitals in solids, to the list of controls, such as pressure and chemical composition, already familiar to materials scientists.
机译：激光冷却和电磁陷阱引发了原子物理学的一场革命，产生了从玻色-爱因斯坦凝聚到单个原子的量子控制的惊人发现。令人特别感兴趣的是，由于它们可以被一个原子用于另一个原子的量子控制，因此它们是激发的里德堡态，其中波函数从其小于0.1 nm的基态扩展到几纳米甚至更大。这允许原子相距足够远，以使其在基态中不相互作用，从而在其激发态中强烈相互作用。为了最终应用这种状态，非常需要固态实现。在这里，我们展示了半导体中最普遍存在的施主，即掺磷硅中杂质波函数的相干控制。在我们的实验中，我们使用自由电子激光来刺激和观察光子回波，哈恩自旋回波的轨道类似物以及磁共振波谱中熟悉的拉比振荡。除了将原子物理学家对量子现象的探索扩展到固态之外，我们的工作还将相干太赫兹辐射（作为固体中轨道的特别精确的调节器）添加到已经熟悉材料的控制（例如压力和化学成分）列表中科学家们。

著录项

  • 来源
    《Nature》 |2010年第7301期|P.1057-1061|共5页
  • 作者

    P. T. Greenland; S. A. Lynch; A. F. G. van der Meer; B. N. Murdin; C. R. Pidgeon; B. Redlich; N. Q. Vinh; G. Aeppli;

  • 作者单位

    London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H OAH, UK;

    London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H OAH, UK;

    FOM Institute for Plasma Physics 'Rijnhuizen', PO Box 1207, NL-3430 BE Nieuwegein, The Netherlands;

    Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK;

    Heriot-Watt University, Department of Physics, Riccarton, Edinburgh EH14 4AS, UK;

    FOM Institute for Plasma Physics 'Rijnhuizen', PO Box 1207, NL-3430 BE Nieuwegein, The Netherlands;

    FOM Institute for Plasma Physics 'Rijnhuizen', PO Box 1207, NL-3430 BE Nieuwegein, The Netherlands ITST, Department of Physics, University of California, Santa Barbara, California 93106-4170, USA;

    London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H OAH, UK;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号