• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nature >Strained silicon as a new electro-optic material
【24h】

Strained silicon as a new electro-optic material

机译：应变硅作为一种新型电光材料

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

For decades, silicon has been the material of choice for mass fabrication of electronics. This is in contrast to photonics, where passive optical components in silicon have only recently been realized(1,2). The slow progress within silicon optoelectronics, where electronic and optical functionalities can be integrated into monolithic components based on the versatile silicon platform, is due to the limited active optical properties of silicon(3). Recently, however, a continuous-wave Raman silicon laser was demonstrated(4); if an effective modulator could also be realized in silicon, data processing and transmission could potentially be performed by all-silicon electronic and optical components. Here we have discovered that a significant linear electro-optic effect is induced in silicon by breaking the crystal symmetry. The symmetry is broken by depositing a straining layer on top of a silicon waveguide, and the induced nonlinear coefficient, chi(2) approximate to 15 pm V-1, makes it possible to realize a silicon electro-optic modulator. The strain-induced linear electro-optic effect may be used to remove a bottleneck(5) in modern computers by replacing the electronic bus with a much faster optical alternative.
机译：数十年来，硅一直是大规模制造电子产品的首选材料。这与光子学相反，光子学中硅的无源光学组件直到最近才被认识到（1,2）。硅光电子学的进展缓慢，这是由于硅的有限的有源光学特性可将电子和光学功能集成到基于通用硅平台的单片组件中（3）。然而，最近，有人证明了一种连续波拉曼硅激光器（4）。如果有效的调制器也可以在硅中实现，则数据处理和传输可能会由全硅电子和光学组件执行。在这里，我们发现通过破坏晶体对称性，在硅中产生了显着的线性电光效应。通过在硅波导的顶部沉积应变层来破坏对称性，并且感应的非线性系数chi（2）接近15 pm V-1，从而可以实现硅电光调制器。通过用更快的光学替代品替代电子总线，可将应变引起的线性电光效应用于消除现代计算机中的瓶颈（5）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号