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General observation of n-type field-effect behaviour in organic semiconductors

机译：有机半导体中n型场效应行为的一般观察

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Organic semiconductors have been the subject of active research for over a decade now, with applications emerging in light-emitting displays and printable electronic circuits. One characteristic feature of these materials is the strong trapping of electrons but not holes(1): organic field-effect transistors (FETs) typically show p-type, but not n-type, conduction even with the appropriate low-work- function electrodes, except for a few special high-electron-affinity(2-4) or low-bandgap(5) organic semiconductors. Here we demonstrate that the use of an appropriate hydroxyl-free gate dielectric - such as a divinyltetramethylsiloxanebis( benzocyclobutene) derivative ( BCB; ref. 6) - can yield n-channel FET conduction in most conjugated polymers. The FET electron mobilities thus obtained reveal that electrons are considerably more mobile in these materials than previously thought. Electron mobilities of the order of 10(-3) to 10(-2) cm(2) V-1 s(-1) have been measured in a number of polyfluorene copolymers and in a dialkyl-substituted poly(p-phenylenevinylene), all in the unaligned state. We further show that the reason why n-type behaviour has previously been so elusive is the trapping of electrons at the semiconductor - dielectric interface by hydroxyl groups, present in the form of silanols in the case of the commonly used SiO2 dielectric. These findings should therefore open up new opportunities for organic complementary metal-oxide semiconductor (CMOS) circuits, in which both p-type and n-type behaviours are harnessed.
机译：十多年来，有机半导体一直是积极研究的主题，其应用正在发光显示器和可印刷电子电路中出现。这些材料的一个特征是电子的强捕获而不是空穴的捕获（1）：即使使用适当的低功函数电极，有机场效应晶体管（FET）也通常显示p型而非n型导电，除了一些特殊的高电子亲和性（2-4）或低带隙（5）有机半导体。在这里，我们证明使用适当的无羟基栅极电介质-例如二乙烯基四甲基硅氧烷双（苯并环丁烯）衍生物（BCB;参考文献6）-可以在大多数共轭聚合物中产生n沟道FET导通。这样获得的FET电子迁移率表明，电子在这些材料中的流动性比以前认为的要大得多。在许多聚芴共聚物和二烷基取代的聚对苯撑亚乙烯基中测得的电子迁移率约为10（-3）至10（-2）cm（2）V-1 s（-1） ，都处于未对齐状态。我们进一步表明，n型行为先前难以捉摸的原因是电子在半导体-介电界面处被羟基捕获，在通常使用的SiO2介电体的情况下，它们以硅烷醇的形式存在。因此，这些发现将为有机互补金属氧化物半导体（CMOS）电路打开新的机遇，其中同时利用了p型和n型行为。

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