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Single-crystal gallium nitride nanotubes

机译：单晶氮化镓纳米管

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Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids(2-10). The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure(2-4). There are reports(5,6,11) of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum(8). The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems. [References: 23]
机译：自从1991年发现碳纳米管以来（参考资料1），为合成各种固体的纳米级管状形式进行了大量的研究工作（2-10）。管状纳米结构的形成通常需要层状或各向异性的晶体结构（2-4）。有报道（5,6,11）是由二氧化硅，氧化铝，硅和不具有层状晶体结构的金属制成的纳米管。它们是通过使用碳纳米管和多孔膜作为模板，或通过薄膜轧制合成的。然而，这些纳米管要么是无定形的，要么是多晶的，要么仅存在于超高真空中（8）。单晶半导体空心纳米管的生长在潜在的纳米级电子，光电和生化传感应用中将是有利的。在这里，我们报告了一种“外延铸造”方法，用于合成内径为30-200 nm，壁厚为5-50 nm的单晶GaN纳米管。六角形ZnO纳米线被用作化学气相沉积系统中GaN薄膜外延过度生长的模板。随后通过热还原和蒸发除去ZnO纳米线模板，从而在基板上形成GaN纳米管的有序阵列。该模板过程应适用于许多其他半导体系统。 [参考：23]

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