Three-dimensional quantum Hall effect and metal-insulator transition in ZrTes

Tang Fangdong; Ren Yafei; Wang Peipei; Zhong Ruidan; Schneeloch John; Yang Shengyuan A.; Yang Kun; Lee Patrick A.; Gu Genda; Qiao Zhenhua; Zhang Liyuan

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Three-dimensional quantum Hall effect and metal-insulator transition in ZrTes

机译：Zrtes中的三维量子霍姆效应和金属绝缘体过渡

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The discovery of the quantum Hall effect (QHE)(1,2) in two-dimensional electronic systems has given topology a central role in condensed matter physics. Although the possibility of generalizing the QHE to three-dimensional (3D) electronic systems(3,4) was proposed decades ago, it has not been demonstrated experimentally. Here we report the experimental realization of the 3D QHE in bulk zirconium pentatelluride (ZrTe5) crystals. We perform low-temperature electric-transport measurements on bulk ZrTe5 crystals under a magnetic field and achieve the extreme quantum limit, where only the lowest Landau level is occupied, at relatively low magnetic fields. In this regime, we observe a dissipationless longitudinal resistivity close to zero, accompanied by a well-developed Hall resistivity plateau proportional to half of the Fermi wavelength along the field direction. This response is the signature of the 3D QHE and strongly suggests a Fermi surface instability driven by enhanced interaction effects in the extreme quantum limit. By further increasing the magnetic field, both the longitudinal and Hall resistivity increase considerably and display a metal-insulator transition, which represents another magnetic-field-driven quantum phase transition. Our findings provide experimental evidence of the 3D QHE and a promising platform for further exploration of exotic quantum phases and transitions in 3D systems.

机译：二维电子系统中量子霍尔效应（QHE）（1,2）的发现已经在凝聚物物理学中致拓扑作用。虽然几十年前提出了推广QHE到三维（3D）电子系统（3,4）的可能性，但它尚未通过实验证明。在这里，我们报告了散装锆旁杜林葡萄柱（Zrte5）晶体中的3D QHE的实验性实现。我们在磁场下对散装Zrte5晶体进行低温电气输送测量，实现极度量子极限，其中仅在相对低的磁场处仅占据最低的Landau水平。在这一制度中，我们观察距离零的折射纵向电阻率，伴随着沿着场方向的费米波长的一半成比例的井发达的霍尔电阻率平台。这种响应是3D QHE的签名，并强烈建议通过极端量子极限中提高的相互作用效应驱动的费米表面不稳定性。通过进一步增加磁场，纵向和霍尔电阻率两者都会显着增加并且显示金属绝缘体转换，这代表了另一个磁场驱动量子相变。我们的研究结果提供了3D QHE的实验证据和一个有前途的平台，以进一步探索异国情调的量子阶段和3D系统的过渡。

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来源
《Nature》 |2019年第7757期|537-541|共5页
作者
Tang Fangdong; Ren Yafei; Wang Peipei; Zhong Ruidan; Schneeloch John; Yang Shengyuan A.; Yang Kun; Lee Patrick A.; Gu Genda; Qiao Zhenhua; Zhang Liyuan;
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作者单位

Southern Univ Sci & Technol Dept Phys Shenzhen Peoples R China|Southern Univ Sci & Technol Shenzhen Inst Quantum Sci & Engn Shenzhen Peoples R China;

Univ Sci & Technol China Int Ctr Quantum Design Funct Mat Hefei Natl Lab Phys Sci Microscale Hefei Anhui Peoples R China|Univ Sci & Technol China Synerget Innovat Ctr Quantum Informat & Quantum P CAS Key Lab Strongly Coupled Quantum Matter Phys Hefei Anhui Peoples R China|Univ Sci & Technol China Dept Phys Hefei Anhui Peoples R China;

Southern Univ Sci & Technol Dept Phys Shenzhen Peoples R China|Southern Univ Sci & Technol Shenzhen Inst Quantum Sci & Engn Shenzhen Peoples R China;

Brookhaven Natl Lab Condensed Matter Phys & Mat Sci Dept Upton NY 11973 USA;

Brookhaven Natl Lab Condensed Matter Phys & Mat Sci Dept Upton NY 11973 USA;

Singapore Univ Technol & Design Res Lab Quantum Mat Singapore Singapore;

Florida State Univ Dept Phys Tallahassee FL 32306 USA|Florida State Univ Natl High Magnet Field Lab Tallahassee FL 32306 USA;

MIT Dept Phys Cambridge MA 02139 USA;

Brookhaven Natl Lab Condensed Matter Phys & Mat Sci Dept Upton NY 11973 USA;

Univ Sci & Technol China Int Ctr Quantum Design Funct Mat Hefei Natl Lab Phys Sci Microscale Hefei Anhui Peoples R China|Univ Sci & Technol China Synerget Innovat Ctr Quantum Informat & Quantum P CAS Key Lab Strongly Coupled Quantum Matter Phys Hefei Anhui Peoples R China|Univ Sci & Technol China Dept Phys Hefei Anhui Peoples R China;

Southern Univ Sci & Technol Dept Phys Shenzhen Peoples R China|Southern Univ Sci & Technol Shenzhen Inst Quantum Sci & Engn Shenzhen Peoples R China;

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1. Three-dimensional quantum Hall effect and metal-insulator transition in ZrTes [J] . Tang Fangdong, Ren Yafei, Wang Peipei, Nature . 2019,第7757期

机译：ZrTes中的三维量子霍尔效应和金属-绝缘体跃迁
2. From the zero-field metal-insulator transition in two dimensions to the quantum Hall transition: A percolation-effective-medium theory - art. no. 073108 [J] . Meir Y. Physical Review, B. Condensed Matter . 2001,第7期

机译：从二维零场金属-绝缘体跃迁到量子霍尔跃迁：渗流有效介质理论-艺术。没有。 073108
3. From the zero-field metal-insulator transition in two dimensions to the quantum Hall transition: A percolation-effective-medium theory - art. no. 073108 [J] . Meir Y. Physical Review, B. Condensed Matter . 2001,第7期

机译：从二维零场金属-绝缘体跃迁到量子霍尔跃迁：渗流有效介质理论-艺术。没有。 073108
4. Effect of Geometry on Metal-Insulator Transition in a Cubical Quantum Dot [C] . R. Kannan, S. Rajashabala DAE Solid State Physics Symposium . 2011

机译：几何对立方量子点中金属 - 绝缘子过渡的影响
5. Metal-Insulator Transition and Quantum Phases in Transition Metal Oxides [D] . Chen, Ru 2014

机译：过渡金属氧化物中的金属绝缘体过渡和量子相
6. High resolution Hall measurements across the VO2 metal-insulator transition reveal impact of spatial phase separation [O] . Tony Yamin, Yakov M. Strelniker, Amos Sharoni -1

机译：横跨VO2金属-绝缘体过渡的高分辨率霍尔测量揭示了空间相分离的影响
7. Three-dimensional quantum Hall effect and metal–insulator transition in ZrTe5 [O] . Fangdong Tang, Yafei Ren, Peipei Wang, 2019

机译：Zrte5中的三维量子霍姆效应和金属绝缘体过渡

Three-dimensional quantum Hall effect and metal-insulator transition in ZrTes

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