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Single-crystal, large-area, fold-free monolayer graphene

机译：单晶，大面积，无折叠单层石墨烯

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摘要

Chemical vapour deposition of carbon-containing precursors on metal substrates is currently the most promising route for the scalable synthesis of large-area, high-quality graphene films(1). However, there are usually some imperfections present in the resulting films: grain boundaries, regions with additional layers (adlayers), and wrinkles or folds, all of which can degrade the performance of graphene in various applications(2-7). There have been numerous studies on ways to eliminate grain boundaries(8,9) and adlayers(10-12), but graphene folds have been less investigated. Here we explore the wrinkling/folding process for graphene films grown from an ethylene precursor on single-crystal Cu-Ni(111) foils. We identify a critical growth temperature (1,030 kelvin) above which folds will naturally form during the subsequent cooling process. Specifically, the compressive stress that builds up owing to thermal contraction during cooling is released by the abrupt onset of step bunching in the foil at about 1,030 kelvin, triggering the formation of graphene folds perpendicular to the step edge direction. By restricting the initial growth temperature to between 1,000 kelvin and 1,030 kelvin, we can produce large areas of single-crystal monolayer graphene films that are high-quality and fold-free. The resulting films show highly uniform transport properties: field-effect transistors prepared from these films exhibit average room-temperature carrier mobilities of around (7.0 +/- 1.0) x 10(3) centimetres squared per volt per second for both holes and electrons. The process is also scalable, permitting simultaneous growth of graphene of the same quality on multiple foils stacked in parallel. After electrochemical transfer of the graphene films from the foils, the foils themselves can be reused essentially indefinitely for further graphene growth.Restricting the initial growth temperatures used for chemical vapour deposition of graphene on metal foils produces optimum conditions for growing large areas of fold-free, single-crystal graphene.
机译：金属基材上含碳前体的化学气相沉积是目前最有前景的大面积，高质量石墨烯薄膜（1）的可扩展合成途径。然而，通常存在一些存在的薄膜中存在的缺陷：晶界，具有附加层（Adlayers）的区域，以及皱纹或折叠，所有这些都可以降解石墨烯在各种应用（2-7）中的性能。有许多关于消除晶界（8,9）和Adlayers（10-12）的方法的研究，但是石墨烯折叠的研究已经不太研究。在这里，我们探讨了从单晶Cu-Ni（111）箔上的乙烯前体生长的石墨烯薄膜的皱纹/折叠过程。我们识别在随后的冷却过程中折叠的临界生长温度（1,030个keelvin），其折叠将自然形成。具体地，由于冷却期间的热收缩而产生的压缩应力通过箔在约1,030kelvin的箔中突出的步骤释放而释放，触发垂直于台阶方向的石墨烯折叠的形成。通过将初始生长温度限制在1,000个keelvin和1,030 kelvin之间，我们可以生产出高质量和无倍的单晶单层石墨烯薄膜的大面积。所得薄膜显示出高度均匀的运输特性：由这些薄膜制备的场效应晶体管显示出平均室温载体迁移率（7.0 +/- 1.0）×10（3）厘米的平均每秒为孔和电子平衡每秒。该过程还可缩放，允许在并联堆叠的多个箔上同时生长相同的质量。从箔的石墨烯膜的电化学转移之后，箔本身可以基本上无限期地重复使用以进行进一步的石墨烯生长。用于金属箔上石墨烯的化学气相沉积的初始生长温度产生最佳条件，用于生长无折叠的大面积的最佳条件单晶石墨烯。

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  • 来源
    《Nature》 |2021年第7873期|519-524|共6页
  • 作者

    Wang Meihui; Huang Ming; Luo Da; Li Yunqing; Choe Myeonggi; Seong Won Kyung; Kim Minhyeok; Jin Sunghwan; Wang Mengran; Chatterjee Shahana; Kwon Youngwoo; Lee Zonghoon; Ruoff Rodney S.;

  • 作者单位

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Chem Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Nanyang Technol Univ Sch Chem & Biomed Engn Singapore Singapore;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Mat Sci & Engn Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Mat Sci & Engn Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Chem Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Sch Energy & Chem Engn Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Mat Sci & Engn Ulsan South Korea;

    Inst Basic Sci IBS Ctr Multidimens Carbon Mat CMCM Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Chem Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Dept Mat Sci & Engn Ulsan South Korea|Ulsan Natl Inst Sci & Technol UNIST Sch Energy & Chem Engn Ulsan South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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