Synthesis of cubic silicon nitride

Andreas Zerr; Gerhard Miehe; George Serghiou; Marcus Schwarz; Edwin Kroke; Ralf Riedel; Hartmut Fuess; Peter Kroll; Reinhard Boehler

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Synthesis of cubic silicon nitride

机译：立方氮化硅的合成

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Silicon nitride (Si_3N_4) is used in a variety of important technological applications. The high fracture toughness, hardness and wear resistance of Si_3N_4-based ceramics are exploited in cutting tools and anti-friction bearings; in electronic applications, Si_3N_4 is used as an insulating, masking and passivating material. Two polymorphs of silicon nitride are known, both of hexagonal structure: α- and β-Si_3N_4. Here we report the synthesis of a third polymorph of silicon nitride, which has a cubic spinel structure. This new phase, c-Si_3N_4, is formed at pressures above 15 GPa and temperatures exceeding 2,000 K, yet persists metastably in air at ambient pressure to at least 700 K. First-principles calculations of the properties of this phase suggest that the hardness of c-Si_3N_4 should be comparable to that of the hardest known oxide (stishovite, a high-pressure phase of SiO_2), and significantly greater than the hardness of the two hexagonal polymorphs.

机译：氮化硅（Si_3N_4）被用于各种重要的技术应用中。 Si_3N_4基陶瓷的高断裂韧性，硬度和耐磨性被用于切削工具和减摩轴承中。在电子应用中，Si_3N_4用作绝缘，掩膜和钝化材料。已知氮化硅的两种多晶型物，均具有六边形结构：α-和β-Si_3N_4。在这里，我们报道了具有立方尖晶石结构的氮化硅的第三多晶型物的合成。这个新的相c-Si_3N_4是在高于15 GPa的压力和超过2,000 K的温度下形成的，但在空气中至少在700 K的环境压力下仍能稳定存在。该相的性质的第一性原理计算表明， c-Si_3N_4应该与已知最坚硬的氧化物（水辉石，SiO_2的高压相）相媲美，并且明显大于两个六边形多晶型物的硬度。

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《Nature》 |1999年第6742期|p.340-342|共3页
作者
Andreas Zerr; Gerhard Miehe; George Serghiou; Marcus Schwarz; Edwin Kroke; Ralf Riedel; Hartmut Fuess; Peter Kroll; Reinhard Boehler;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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正文语种 eng
中图分类自然科学总论;
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1. Assessment of the effect of particle size on the rate of temperature alignment in systems used for shock-wave synthesis of diamond, cubic boron nitride, and gamma-silicon nitride, based on a simple model [J] . Zhukov A. N., Zakiev S. E., Yakushev V. V. High temperature: English translation of teplofizika vysokikh temperatur . 2016,第1期

机译：基于简单模型评估金刚石，立方氮化硼和γ-氮化硅的冲击波合成系统中粒径对温度对准速率的影响
2. SYNTHESIS AND CHARACTERIZATION OF CUBIC SILICON CARBIDE (β-SiC) AND TRIGONAL SILICON NITRIDE (α-Si{sub}3N{sub}4) NANOWIRES [J] . Karine Saulig-Wenger, Mikhael Bechelany, David Cornu, Ceramic Engineering and Science Proceedings . 2005,第8期

机译：立方碳化硅（β-SiC）和三方氮化硅（α-Si{sub} 3N {sub} 4）纳米线的合成与表征
3. Synthesis of Cubic Silicon Nitride in a Cylindrical Recovery Capsule [J] . A. S. Yunoshev Combustion, Explosion, and Shock Waves . 2010,第5期

机译：圆柱形回收胶囊中立方氮化硅的合成
4. SYNTHESIS AND CHARACTERIZATION OF CUBIC SILICON CARBIDE (beta-SiC) AND TRIGONAL SILICON NITRIDE (alpha-Si_3N_4) NANOWIRES [C] . Karine Saulig-Wenger, Mikhael Bechelany, David Comu International Conference on Advanced Ceramics and Composites . 2007

机译：三次碳化硅（β-SiC）和三角氮化硅（α-Si_3N_4）纳米线的合成与表征
5. Analysis of zincblende-phase gallium nitride, cubic-phase silicon carbide, and gallium arsenide MESFETs including a full-band Monte Carlo simulator [D] . Weber, Michael 2005

机译：闪锌矿相氮化镓，立方相碳化硅和砷化镓MESFET的分析，包括全频带Monte Carlo模拟器
6. Transparent polycrystalline cubic silicon nitride [O] . Norimasa Nishiyama, Ryo Ishikawa, Hiroaki Ohfuji, -1

机译：透明多晶立方氮化硅
7. Synthesis and Sintering of Cubic Silicon Nitride (cSi3N4). [O] . Toshimori SEKINE 2003

机译：立方氮化硅（CSI3N4）的合成和烧结。
8. Effects of ambient conditions on the adhesion of cubic boron nitride films on silicon substrates [R] . Cardinale, G. F. , Howitt, D. G. , Mirkarimi, P. B. , 1994

机译：环境条件对立方氮化硼薄膜在硅衬底上粘附性的影响

Synthesis of cubic silicon nitride

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