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Lanthanum-substituted bismuth titanate for use in non-volatile memories

机译：镧取代钛酸铋用于非易失性存储器

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Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest in developing non-volatile memories that use ferroelectric thin films—'ferroelectric random access memories', or FRAMs—in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (P_r) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of P_r ('fatigue') with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem, but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of ～650℃ and their values of P_r are larger than those of the SBT films.
机译：非易失性存储设备之所以如此命名，是因为它们在电源中断时会保留信息。因此它们是重要的计算机组件。在这种情况下，最近人们对开发使用铁电薄膜的非易失性存储器（“铁电随机存取存储器”或FRAM）产生了浓厚的兴趣，其中信息以铁电材料的极化状态存储。为了实现实用的FRAM，薄膜应满足以下条件：与现有动态随机存取存储技术的兼容性，大的剩余极化（P_r）和可靠的极化循环特性。早期的工作集中在锆钛酸铅（PZT）上，但是，当这种材料的膜在金属电极上生长时，它们通常会因极性转换而降低P_r（“疲劳”）。已经提出钽酸锶铋（SBT）和相关的氧化物来克服疲劳问题，但是这种材料还具有其他缺点，例如沉积温度高。在这里，我们证明了镧取代钛酸铋铋薄膜为FRAM应用提供了有希望的替代方法。该膜在金属电极上无疲劳，可以在〜650℃的温度下沉积，其P_r值大于SBT膜。

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