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首页> 外文期刊>Nature >Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure
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Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure

机译：有序双钙钛矿结构的氧化物材料的室温磁阻

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摘要

Colossal magnetoresistance—a huge decrease in resistance in response to a magnetic field—has recently been observed in manganese oxides with perovskite structure. This effect is attracting considerable interest from both fundamental and practical points of view. In the context of using this effect in practical devices, a noteworthy feature of these materials is the high degree of spin polarization of the charge carriers, caused by the half-metallic nature of these materials; this in principle allows spindependent carrier scattering processes, and hence the resistance, to be strongly influenced by low magnetic fields. This type of field control has been demonstrated for charge-carrier scattering at tunnelling junctions and at crystal-twin or ceramic grain boundaries, although the operating temperature of such structures is still too low (≤ 150K) for most applications. Here we report a material—Sr_2FeMoO_6, an ordered double perovskite— exhibiting intrinsic tunnelling-type magnetoresistance at room temperature. We explain the origin of this behaviour with electronic-structure calculations that indicate the material to be half-metallic. Our results show promise for the development of ordered perovskite magnetoresistive devices that are operable at room temperature.
机译：最近在具有钙钛矿结构的锰氧化物中观察到巨大的磁阻-响应于磁场的电阻大大降低。从基础和实践的角度来看，这种效果都引起了极大的兴趣。在实际设备中使用这种效应的情况下，这些材料的一个显着特征是电荷载流子的高度自旋极化，这是由于这些材料的半金属性质引起的；原则上，这使自旋相关的载流子散射过程以及电阻受到低磁场的强烈影响。尽管这种结构的工作温度对于大多数应用而言仍然太低（≤150K），但已证明这种类型的场控制可用于隧穿结以及晶体孪晶或陶瓷晶界处的载流子散射。在这里，我们报告一种材料-Sr_2FeMoO_6，一种有序的双钙钛矿-在室温下表现出固有的隧穿型磁阻。我们用表明材料为半金属的电子结构计算来解释这种行为的起源。我们的结果表明有望开发在室温下可操作的有序钙钛矿磁阻器件。

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