A solution to an inhomogeneous heat-conduction equation satisfying mixed boundary conditions is obtained for a semiconductor junction irradiated by a high-power electromagnetic pulse. The solution allows one to determine the temperature at the junction as a function of the pulse duration for various pulse powers and junction parameters with regard to an increase in the temperature at the boundary opposite that struck by the pulse. The method is exemplified by estimating the functional damage to a microwave point mixer Si diode, which is commonly used as an element in frequency-converter circuits in receiving devices of various types.
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