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Deuterium retention in tungsten and tungsten-tantalum alloys exposed to high-flux deuterium plasmas

机译:暴露于高通量氘等离子体中的钨和钨钽合金中的氘保留

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摘要

A direct comparison of deuterium retention in samples of tungsten and two grades of tungsten-tantalum alloys-W-1%Ta and W-5%Ta, exposed to deuterium plasmas (ion flux ~10~(24) m~(-2) s~(-1) ion energy at the biased target ~50 eV) at the plasma generator Pilot-PSI was performed using thermal desorption spectroscopy (TDS). No systematic difference in terms of total retention in tungsten and tungsten-tantalum was identified. The measured retention value for each grade did not deviate by more than 24% from the value averaged over the three grades exposed to the same conditions. No additional desorption peaks appeared in the TDS spectra of the W-Ta samples as compared with the W target, indicating that no additional kinds of traps are introduced by the alloying of W with Ta. In the course of the experiment the same samples were exposed to the same plasma conditions several times, and it is demonstrated that samples with the history of prior exposures yield an increase in deuterium retention of up to 130% under the investigated conditions compared with the samples that were not exposed before. We consider this as evidence that exposure of the considered materials to ions with energy below the displacement threshold generates additional traps for deuterium. The positions of the release peaks caused by these traps are similar for W and W-Ta, which indicates that the corresponding traps are of the same kind.
机译:直接比较暴露于氘等离子体(离子通量〜10〜(24)m〜(-2)的钨和两种等级的钨钽合金W-1%Ta和W-5%Ta中的氘保留量使用热脱附光谱法(TDS)在等离子发生器Pilot-PSI上对s _(-1)离子能量(在偏置目标〜50 eV处)进行了测试。在钨和钨钽中的总保留量方面没有系统的差异。与相同条件下三个等级的平均值相比,每个等级的保留值平均值偏差不超过24%。与W目标相比,W-Ta样品的TDS光谱中没有出现其他解吸峰,这表明W与Ta合金化不会引入其他类型的陷阱。在实验过程中,相同的样品多次暴露于相同的血浆条件下,并且证明了具有先前暴露历史的样品与所研究的条件相比,在研究的条件下氘的保留量最多提高了130%。以前没有暴露过。我们认为这是证据,表明所考虑的材料暴露于能量低于位移阈值的离子会产生氘的其他陷阱。对于W和W-Ta,由这些陷阱引起的释放峰的位置相似,这表明相应的陷阱属于同一种类。

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  • 来源
    《Nuclear fusion》 |2012年第10期|p.103021.1-103021.6|共6页
  • 作者单位

    SCK-CEN, Boeretang 200, 2400 Mol, Belgium,Department of Applied Physics, Ghent University, Plateaustraat 22, 9000 Ghent, Belgium;

    Department of Applied Physics, Ghent University, Plateaustraat 22, 9000 Ghent, Belgium;

    FOM Institute DIFFER - Dutch Institute for Fundamental Energy Research, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands;

    SCK-CEN, Boeretang 200, 2400 Mol, Belgium;

    Department of Applied Physics, Ghent University, Plateaustraat 22, 9000 Ghent, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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