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Effect of the resistive wall on the growth rate of weakly unstable external kink mode in general 3D configurations

机译：电阻壁对一般3D配置中弱不稳定外部扭结模式的生长速率的影响

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摘要

The formulation of a method for the systematic computation of the growth rate of the weakly unstable resistive wall mode (RWM) in 3D configurations by using results from ideal stability codes is presented. It is shown that the growth rate of the RWM is given, approximately, by the rate at which the available free energy for the ideal external kink mode can be dissipated by the resistive wall. The eigenfunction is also approximated by that of the external kink mode. This formulation is demonstrated by coupling to the ideal MHD code KSTEP with computation of the dissipation on the resistive wall. Results of the stability of the RWM in LHD plasmas and discussion of the validity and improvement of the computation are also included.
机译：提出了通过使用理想稳定性代码的结果，系统地计算3D配置中的弱不稳定电阻墙模式（RWM）增长率的方法。结果表明，RWM的增长率大约是通过电阻壁消散理想外部扭结模式的可用自由能的速率得出的。本征函数也可以通过外部扭结模式来近似。通过与理想的MHD代码KSTEP耦合并计算电阻壁上的耗散，可以证明该公式。还包括RWM在LHD等离子体中的稳定性结果以及对有效性和计算改进的讨论。

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