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MHD instabilities leading to disruptions in low beta JT-60U reversed shear plasmas

机译：MHD不稳定导致低βJT-60U反向剪切等离子体破裂

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摘要

High performance reversed shear (RS) discharges with strong internal transport barrier (ITB) and flat pressure profile in the plasma core region disrupt frequently even with low beta. We analysed MHD instabilities leading to low beta disruption with measuring fluctuations and current profile with MSE measurement. We mainly observed two types of disruptions. One is the disruption without precursor at surface q similar to integer. The other is the disruption with n = 1 precursor of gamma > 100 ms. The poloidal mode number of the n = 1 mode is equal to the outermost integer of q. The n = I mode exists continuously from the peripheral region to the ITB layer or the n = I modes exist separately at the peripheral region and at the ITB layer. The phase has a difference of 180 degrees between at the peripheral region and at the ITB layer. To explain these characteristics of disruption, we introduce a simple model where disruption occurs when both MHD instabilities at the plasma surface and at the q = m surface in the RS region, where m and n are the poloidal and the toroidal mode numbers of the surface MHD instability, are simultaneously unstable. This simple model can explain almost all observed disruption by two processes. One is the surface mode triggered disruption, which occurs when surface q changes; the corresponding q = m surface at ITB layer changes discretely. The other is the internal mode triggered disruption, which occurs when the corresponding q = m surface becomes unstable gradually.
机译：高性能的反向剪切（RS）放电具有很强的内部传输屏障（ITB），并且即使在低β值的情况下，等离子核心区域中的压力分布也平坦。我们通过测量波动和MSE测量来分析导致低β干扰的MHD不稳定性。我们主要观察到两种类型的中断。一种是在表面q处没有前体的破坏，类似于整数。另一个是对n = 1的前体> 100 ms造成的破坏。 n = 1模的极坐标模数等于q的最外面的整数。从外围区域到ITB层连续存在n = I模式，或者在外围区域和ITB层分别存在n = I模式。相位在外围区域和ITB层之间相差180度。为了解释这些破坏的特征，我们引入一个简单的模型，当在RS区域的等离子体表面和q = m / n表面的MHD不稳定性都出现MHD不稳定性时，就会发生破坏，其中m和n是P的极坐标和环模数。表面MHD不稳定，同时又不稳定。这个简单的模型可以解释几乎所有通过两个过程观察到的破坏。一种是表面模式触发的破坏，当表面q发生变化时发生。 ITB层的相应q = m / n表面离散地变化。另一个是内部模式触发的破坏，当相应的q = m / n表面逐渐变得不稳定时发生。

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