Silicon photomultiplier detector with multipurpose in-pixel electronics in standard CMOS technology

Blanco R.; Kraemer C.; Peric I

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Silicon photomultiplier detector with multipurpose in-pixel electronics in standard CMOS technology

机译：硅光电倍增管探测器，采用标准CMOS技术的多功能像素电子器件

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This paper presents a monolithic avalanche diode array designed in a commercial AMS 350 nm high-voltage CMOS (HV-CMOS) process. This monolithic detector comprises a single photon avalanche diode (SPAD), active quenching circuit and readout electronics. The SPAD consists of a p+ diffusion-well junction surrounded by a shallow p-well acting as a guard ring to prevent edge breakdown. The monolithic detector has a matrix of 20 x 15 pixels. The size of one SPAD pixel is 38 x 92 mu m(2). One pixel defined as SPAD and readout electronics has a total size of 115 x 111 mu m(2) with a fill factor = 24.3% and a chip size of about 2.8 x 2.6 mm(2).

机译：本文提出了一种单片雪崩二极管阵列，该阵列是在商业AMS 350 nm高压CMOS（HV-CMOS）工艺中设计的。该单片检测器包括一个光子雪崩二极管（SPAD），有源猝灭电路和读出电子器件。 SPAD由一个p +扩散/ n阱结组成，周围是浅p阱，用作保护环以防止边缘击穿。单片检测器具有20 x 15像素的矩阵。一个SPAD像素的大小为38 x 92微米（2）。定义为SPAD和读出电子设备的一个像素的总尺寸为115 x 111μm（2），填充系数= 24.3％，芯片尺寸约为2.8 x 2.6 mm（2）。

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来源
《Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment》 |2019年第21期|699-700|共2页
作者
Blanco R.; Kraemer C.; Peric I;
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作者单位

KIT ADL ASIC & Detector Lab, Inst Data Proc & Elect IPE, Karlsruhe, Germany;

KIT ADL ASIC & Detector Lab, Inst Data Proc & Elect IPE, Karlsruhe, Germany;

KIT ADL ASIC & Detector Lab, Inst Data Proc & Elect IPE, Karlsruhe, Germany;

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正文语种 eng
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关键词
Solid state detectors; Photo detectors; SPAD; SiPM;

机译：固态探测器;光电探测器;SPAD;SiPM;

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专利

1. Silicon photomultiplier detector with multipurpose in-pixel electronics in standard CMOS technology [J] . Blanco R., Kraemer C., Peric I Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2019,第Auga21期

机译：硅光电倍增器探测器，具有多用途的CMOS技术中的多用途电镀电子器件
2. Front-End electronics for Silicon Photomultiplier detectors implemented in CMOS VLSI integrated circuit [J] . Rafal MOS, rnJerzy BARSZCZ, rnMarcin JASTRZAB, Przeglad Elektrotechniczny . 2010,第11期

机译：CMOS VLSI集成电路中实现的用于硅光电倍增管检测器的前端电子设备
3. First measurement of the in-pixel electron multiplying with a standard imaging CMOS technology: Study of the EMCMOS concept [J] . Timothee Brugiere, Frederic Mayer, Pierre Fereyre, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2015,第jula1期

机译：使用标准成像CMOS技术的像素内电子倍增的首次测量：EMCMOS概念的研究
4. Time-of-flight chip in standard CMOS technology with in-pixel adaptive number of accumulations [C] . J. Illade-Quinteiro, V.M. Brea, P. López, IEEE International Symposium on Circuits and Systems . 2016

机译：标准CMOS技术中的飞行时间芯片，具有像素内自适应累积数
5. Front-end CMOS Transimpedance Amplifiers on a Silicon Photomultiplier Resistant to Fast Neutron Fluence [D] . ?Valles Montenegro, Mario 2020

机译：硅光电倍增器上的前端CMOS跨阻抗放大器，耐快中子流量
6. Application of CMOS Technology to Silicon Photomultiplier Sensors [O] . Nicola D’Ascenzo, Xi Zhang, Qingguo Xie 2017

机译：CMOS技术在硅光电倍增传感器中的应用
7. Front end electronics for silicon strip detectors in 90-nm CMOS technology: Advantages and challenges [O] . Kaplon, J, Noy, M 2010

机译：用于90 nm CMOS技术的硅条检测器的前端电子设备：优势与挑战

Silicon photomultiplier detector with multipurpose in-pixel electronics in standard CMOS technology

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