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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Test results of ATLASPIX3 - A reticle size HVCMOS pixel sensor designed for construction of multi chip modules
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Test results of ATLASPIX3 - A reticle size HVCMOS pixel sensor designed for construction of multi chip modules

机译:ATLaspix3的测试结果 - 一种专为多芯片模块构造而设计的掩模版尺寸HVCMOS像素传感器

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摘要

High voltage CMOS pixel sensors will be or are proposed to be used in several particle physics experiments for particle tracking like Mu3e experiment. ATLASPIX3 is the first full reticle size monolithic HVCMOS sensor for construction of multi-chip modules. The specifications for the use case have been taken from ATLAS pixel upgrade in fifth layer where it was a candidate for. The size of the chip is 2.0 × 2.1 cm~2 with periphery at one side which makes the chip 3-side buttable. ATLASPIX3 has been implemented in a standard 180 nm HVCMOS process. Each pixel has an area of 150 × 50 μm~2 and contains a large charge collecting electrode implemented as deep n-well. The depleted volume around the n-well is enlarged by a high voltage bias and the usage of higher resistivity substrate. The readout electronics supports both triggered and triggerless readout with zero-suppression. ATLASPIX3 could be used for the construction of CMOS modules for particle tracking in experiments where high time resolution, high radiation tolerance, low power and low material budget are required. In the design phase, special attention has been paid to decreasing timing differences between pixels and the rate capability of the readout.
机译:高电压CMOS像素传感器将被或被提出用于几种粒子物理实验,例如MU3E实验。 ATLaspix3是第一个全掩模版大小单片HVCMOS传感器,用于构造多芯片模块。使用案例的规范已从第五层中的Atlas像素升级中取出,其中它是候选者。芯片的大小为2.0×2.1cm〜2,周边在一侧,使芯片3侧按键。 ATLaspix3已在标准的180nm HVCMOS过程中实现。每个像素的面积为150×50μm〜2,并且包含作为深N-阱实现的大电荷收集电极。 N阱周围的耗尽量由高电压偏压和较高电阻率衬底的使用而放大。读出电子产品支持触发和触发器读数,零抑制。 Atlaspix3可用于在实验中构建CMOS模块,用于在需要高时分辨率,高辐射容差,低功耗和低材料预算的实验中进行粒子跟踪。在设计阶段,已经支付了特别注意,降低像素之间的时序差异和读出的速率能力。

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