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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Freestanding single crystal chemical vapor deposited diamond films produced using a lift-off method: Response to α-particles from ~(241)Am and crystallinity
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Freestanding single crystal chemical vapor deposited diamond films produced using a lift-off method: Response to α-particles from ~(241)Am and crystallinity

机译：使用剥离法生产的独立式单晶化学气相沉积金刚石膜：对〜（241）Am和结晶度的α粒子的响应

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摘要

Thick (～100 μrn) undoped diamond films were grown homoepitaxially on single crystal (SC) diamond substrates by microwave plasma chemical vapor deposition (CVD). To form a freestanding SC diamond film (plate), the substrate was pre-ion-implanted with high-energy ion beams before the film growth, and after the thick-film deposition, the substrate was eliminated using a lift-off method, resulting in fabrication of a SC CVD diamond plate. Two samples were prepared; sample 1 was grown on a (001) oriented, nitrogen doped CVD SC diamond at ～900 ℃ with the input microwave power of 1.7 kW, while sample 2 was grown on a (001) oriented, high-pressure high-temperature synthesized type-Ib SC diamond at ～900 ℃ with the input microwave power of 1.25 kW. The formed SC plates have high optical transparencies, indicating no remarkable optical absorptions seen in the wavelength from ultraviolet to near infrared. The photoluminescence (PL) spectra of both samples show strong free exciton FE peaks, while in sample 2 relatively strong optical emissions corresponding to nitrogen related centers were observed in the visible region. After the metal electrodes were formed on both faces of the SC diamond plate to fabricate a sandwich-type diamond particle detector, the energy spectra of 5.486 MeV α-particles from ~(241)Am were measured. The charge collection efficiencies (CCEs) of sample 1 were CCE = 98% for a hole transport and CCE = 89% for an electron transport, respectively, while CCEs of sample 2 were CCE = 80% for a hole transport and CCE = 78% for an electron transport, respectively. These results indicate that both holes and electrons in sample 2 were trapped much more than those in sample 1. Possible candidates of carrier capture centers are nitrogen and/or nitrogen-vacancy centers observed in PL, nonradi-ative defect (complex) centers, extended defects such as threading dislocations observed in micrographs taken with polarizers. The different growth conditions most likely affected crystallinity and responses to a-particles of the samples.
机译：通过微波等离子体化学气相沉积（CVD）在单晶（SC）金刚石基板上同质外延生长厚（〜100μm）的未掺杂金刚石薄膜。为了形成独立的SC金刚石膜（板），在膜生长之前将高能离子束预离子注入到衬底中，然后在厚膜沉积之后，采用剥离法去除衬底，从而得到结果。在SC CVD金刚石板的制造中。准备了两个样品。样品1在〜900℃的条件下，在（001）取向的氮掺杂CVD SC金刚石上生长，输入微波功率为1.7 kW，而样品2在（001）取向的高压高温合成型上生长- 〜900℃的Ib SC金刚石，输入微波功率为1.25 kW。所形成的SC板具有高的光学透明性，表明在从紫外到近红外的波长中没有观察到明显的光吸收。两种样品的光致发光（PL）光谱均显示出很强的自由激子FE峰，而在样品2中，在可见光区域观察到了与氮相关中心相对应的相对较强的光发射。在SC金刚石板的两个面上形成金属电极以制造夹心型金刚石颗粒检测器之后，测量来自〜（241）Am的5.486MeVα-颗粒的能谱。对于空穴传输，样品1的电荷收集效率（CCEs）为CCE = 98％，对于电子传输，样品1的电荷收集效率为CCE = 89％，而对于空穴传输，样品2的CCEs为CCE = 80％，并且对于CCE = 78％分别用于电子传输。这些结果表明，样品2中的空穴和电子都比样品1中的电子和空穴捕获得多。载流子捕获中心的可能候选对象是在PL中观察到的氮和/或氮空位中心，非辐射缺陷（复杂）中心，扩展的。诸如偏光片显微照片中观察到的螺纹位错等缺陷。不同的生长条件最有可能影响结晶度和对样品a粒子的响应。

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    Nobuteru Tsubouchi; Y. Mokuno; A. Kakimoto; F. Fujita; J.H. Kaneko; H. Yamada; A. Chayahara; S. Shikata;

  • 作者单位

    Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (A1ST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;

    Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (A1ST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;

    Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

    Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

    Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;

    Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (A1ST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;

    Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (A1ST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;

    Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (A1ST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan;

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  • 正文语种 eng
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  • 关键词

    CVD; single crystal diamond; freestanding; lift-off process; crystallinity; diamond particles detector; α-particles;

    机译：CVD;单晶钻石;独立提离过程;结晶度钻石颗粒探测器α粒子;

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