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Effect of vacancy defect on optoelectronic properties of monolayer tungsten diselenide

机译：空位缺陷对单层二硒化钨光电性能的影响

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摘要

Optoelectronic properties of pristine and vacancy defect monolayer tungsten diselenide (WSe_2) have been investigated by the first principles calculations. The results predicate that Se defect monolayer WSe_2 is direct semiconductor whereas the W defect monolayer WSe_2 is metallic. The Se defect can decrease the work function for monolayer WSe_2, however, the W defect can increase the work function for monolayer WSe_2. The absorption edge for defect monolayer WSe_2 occurs obviously red-shift, and the energy loss of electron transmitting in defect monolayer WSe_2 is faster than pristine monolayer WSe_2. The work gives a theoretical guidance for the fabrication of monolayer WSe_2 optoelectronic nanodevices.
机译：通过第一性原理计算研究了原始和空位缺陷单层二硒化钨（WSe_2）的光电性能。结果表明，Se缺陷单层WSe_2是直接半导体，而W缺陷单层WSe_2是金属。 Se缺陷可以降低单层WSe_2的功函数，但是，W缺陷可以增加单层WSe_2的功函数。缺陷单层WSe_2的吸收边明显发生红移，缺陷单层WSe_2中电子传输的能量损失比原始单层WSe_2快。这项工作为单层WSe_2光电子纳米器件的制造提供了理论指导。

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  • 来源
    《Optical and quantum electronics》 |2018年第1期|1.1-1.9|共9页
  • 作者

    Zhen Cui; Xizheng Ke; Enling Li; Xia Wang; Yingchun Ding; Tong Liu; Meiqin Li; Binyue Zhao;

  • 作者单位

    School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China;

    School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China;

    School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China;

    CT Department, Yan'an University Affiliated Hospital, Yan'an 716000, People's Republic of China;

    College of Optoelectronics Technology, Chengdu University of Information Technology, Chengdu 610225, People's Republic of China;

    School of Physics and Astronomy, Queen Mary University of London, London E1 4NS, UK;

    School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China;

    School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Optoelectronic property; Vacancy defect; Tungsten diselenide;

    机译：光电特性;空缺;二硒化钨;

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