Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition

P. Martyniuk; P. Madejczyk; M. Kopytko; W. Gawron; J. Rutkowski

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Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition

机译：在零电压条件下工作的长波HgCdTe光电探测器的最大响应时间

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The paper reports on the long-wave infrared HgCdTe detector for utmost short response time operating for unbiased and room temperature condition. The response time was calculated at the level of ～ 220-520 ps for zero bias condition. It was shown that depending on architecture extra series resistance ≤ 20 Ω related to the processing allows to reach response time within the range ～ 220 ps. The highest detectivity of the simulated structure was assessed at the level of ～ 10~8 Jones assuming immersion.

机译：这篇论文报道了在无偏和室温条件下，最短响应时间的长波红外HgCdTe检测器。在零偏压条件下，响应时间被计算为〜220-520 ps的水平。结果表明，根据架构的不同，与处理相关的≤20Ω的额外串联电阻可以使响应时间达到〜220 ps的范围。假设浸入，模拟结构的最高探测灵敏度在〜10〜8 Jones的水平上评估。

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来源
《Optical and quantum electronics》 |2018年第1期|17.1-17.7|共7页
作者
P. Martyniuk; P. Madejczyk; M. Kopytko; W. Gawron; J. Rutkowski;
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作者单位

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;

Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
LWIR; HgCdTe; Response time;

机译：LWIR;HgCdTe;响应时间;

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专利

1. THEORETICAL SIMULATION OF A ROOM TEMPERATURE HgCdTe LONG-WAVE DETECTOR FOR FAST RESPONSE - OPERATING UNDER ZERO BIAS CONDITIONS [J] . Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, Metrology and Measurement Systems: Metrologia i Systemy Pomiarowe . 2017,第4期

机译：室温HGCDTE长波检测器的理论模拟快速响应 - 在零偏压条件下运行
2. THEORETICAL SIMULATION OF A ROOM TEMPERATURE HgCdTe LONG-WAVE DETECTOR FOR FAST RESPONSE - OPERATING UNDER ZERO BIAS CONDITIONS [J] . Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, Metrology and Measurement Systems: Metrologia i Systemy Pomiarowe . 2017,第4期

机译：室温HGCDTE长波检测器的理论模拟快速响应 - 零偏置条件下的工作
3. Theoretical utmost performance of the (100) long-wave HgCdTe Auger suppressed photodetectors grown on GaAs [J] . Martyniuk P., Gawron W., Madejczyk P., Infrared physics and technology . 2017,第期

机译：（100）长波HGCDTE螺旋钻的理论最大性能抑制在GaAs上生长的光电探测器
4. Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition [C] . P. Martyniuk, P. Madejczyk, M. Kopytko, International Conrference on Numerical Simulation of Optoelectronic Devices . 2017

机译：在零电压条件下运行的长波HGCDTE光电探测器的最大响应时间
5. Shock-response analysis of a hard-disk drive in tilt-drop tests under non-operating and operating conditions. [D] . Virmani, Manish. 2005

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6. Ultrabroad‐Spectrum Photodetectors: Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 µm (Adv. Sci. 15/2019) [O] . Xudong Wang, Hong Shen, Yan Chen, 2019

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7. Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response − Operating Under Zero Bias Conditions [O] . Martyniuk Piotr, Kopytko Małgorzata, Madejczyk Paweł, 2017

机译：室温HgCdTe长波检测器快速响应的理论模拟 - 零偏压条件下运行

Utmost response time of long-wave HgCdTe photodetectors operating under zero voltage condition

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