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Analysis of operating characteristics of ZnPc organic thin film transistor

机译:ZnPc有机薄膜晶体管的工作特性分析

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摘要

In this paper, zinc phthalocyanine (ZnPc) is chosen as the active layer to form a vertical thin film phototransistor with a structure of Cu/ZnPc/Al/ZnPc/ITO. ZnPc has a good photo-sensitive characteristic. Illumination can promote the production of electron-hole pairs, and illumination can reduces the height of the Schottky barrier. When V_(bc) = 0 V, the barrier height is 0.485 eV under 351 nm light, and the barrier height is 0.509 eV under darkness. It can be concluded that illumination can reduces the barrier height of 0.024 eV in this device.
机译:本文以锌酞菁(ZnPc)为有源层,形成具有Cu / ZnPc / Al / ZnPc / ITO结构的垂直薄膜光电晶体管。 ZnPc具有良好的感光特性。照明可以促进电子-空穴对的产生,并且照明可以减小肖特基势垒的高度。当V_(bc)= 0 V时,在351 nm的光下势垒高度为0.485 eV,在黑暗下势垒高度为0.509 eV。可以得出结论,照明可以使该器件的势垒高度降低0.024 eV。

著录项

  • 来源
    《Optical and quantum electronics》 |2017年第8期|261.1-261.6|共6页
  • 作者

    S. Zhao; D. X. Wang;

  • 作者单位

    Key Laboratory of Engineering Dielectrics and Its Application, Department of Electronic Science and Technology, Harbin University of Science and Technology, Harbin 150080, China;

    Key Laboratory of Engineering Dielectrics and Its Application, Department of Electronic Science and Technology, Harbin University of Science and Technology, Harbin 150080, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zinc phthalocyanine; Electron-hole pairs; Photo-sensitive characteristic; Barrier;

    机译:锌酞菁;电子-空穴对;光敏特性;屏障;

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