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首页> 外文期刊>Optical and quantum electronics >A new modeling approach for amorphous silicon passivated front contact for thin silicon solar cells
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A new modeling approach for amorphous silicon passivated front contact for thin silicon solar cells

机译：用于非晶硅钝化的薄硅太阳能电池正面接触的新建模方法

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摘要

Thermal oxide (SiO_2) and hydrogen-rich amorphous silicon (a-Si:H) interlayer at the front metal-silicon contact of thin silicon solar cells has been optimized based on a theoretical model. An analytical solution to the complete set of equations has been provided to highlighted the potential use and implications of the a-Si:H/SiO_2 as a passivation coating at the front surface in crystalline silicon solar cells. The simple analytical expressions of the emitter reverse saturation current density and the photocurrent density were also obtained taking into account bulk recombination velocity and non-uniform doping profile. An optimum a-Si:H/SiO_2 interlayer thicknesses were noted to enhance the collection of light-generated free carriers, which improves the efficiency of the short wavelength quantum. This is achieved by a drastic reduction in the effective recombination at the emitter upper boundary, a properly primarily responsible for the decrease in the emitter saturation current density. The findings indicated that the emitter region should be treated as an active layer because an optimum a-Si:H/SiO_2 interlayer thicknesses at the front contact (W_(n,1) = 5 nm and δ = 14 A) give an improvement that can reach 3.6 mA/ cm2 for the photocurrent density, 63 mV for the open-circuit voltage, and 3.95% for the cell efficiency.
机译：基于理论模型对薄硅太阳能电池正面金属硅接触处的热氧化物（SiO_2）和富氢非晶硅（a-Si：H）中间层进行了优化。提供了对完整方程组的分析解决方案，以突出显示a-Si：H / SiO_2作为晶体硅太阳能电池前表面的钝化涂层的潜在用途和含义。考虑到体复合速度和不均匀的掺杂分布，还获得了发射极反向饱和电流密度和光电流密度的简单解析表达式。观察到最佳的a-Si：H / SiO_2中间层厚度可以增强光生自由载流子的收集，从而提高短波长量子的效率。这是通过大幅降低发射极上边界处的有效重组来实现的，这是造成发射极饱和电流密度降低的主要原因。研究结果表明，应将发射极区视为有源层，因为前接触处的最佳a-Si：H / SiO_2中间层厚度（W_（n，1）= 5 nm和δ= 14 A）可以改善以下情况：光电流密度可达3.6 mA / cm2，开路电压可达63 mV，电池效率达3.95％。

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  • 来源
    《Optical and quantum electronics》 |2017年第8期|259.1-259.14|共14页
  • 作者

    Amira Bougoffa; Abdessalem Trabelsi; Abdelaziz Zouari; Essebti Dhahri;

  • 作者单位

    Laboratory of Applied Physics, Faculty of Sciences of Sfax, University of Sfax, B. P. 1171, 3000 Sfax, Tunisia;

    Laboratory of Applied Physics, Faculty of Sciences of Sfax, University of Sfax, B. P. 1171, 3000 Sfax, Tunisia;

    Laboratory of Applied Physics, Faculty of Sciences of Sfax, University of Sfax, B. P. 1171, 3000 Sfax, Tunisia;

    Laboratory of Applied Physics, Faculty of Sciences of Sfax, University of Sfax, B. P. 1171, 3000 Sfax, Tunisia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Solar cells; Passivation; a-Si:H; Tunneling oxide;

    机译：太阳能电池;钝化;a-Si：H;隧道氧化物;

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