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Small and large signal analysis using circuit model of InGaAs/InP based uni-travel carrier photodiode

机译：使用基于InGaAs / InP的单程载流子光电二极管的电路模型进行大小信号分析

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摘要

An equivalent circuit model of uni-traveling carrier photodiode (UTC-PD) is developed from integral carrier density rate equation and few important properties of the device such as the electrical and optical characteristics are evaluated by employing advanced device physics. Circuit model incorporates chip and package parasitic of the device quite simply to provide practical behaviour of UTC-PD. We have developed small signal ac circuit model which is useful for the analysis of low power modulation characteristics of the device and dc circuit model which is advantageous to find wavelength dependent responsivity fairly accurately. At high optical input power the device bandwidth is found to be increased through enhancement of self-induced field in the absorption region and high output power can be derived from the device when absorption width is large. Such condition calls for large signal analysis. We have developed large signal circuit model by combining few mathematical transformations with small signal circuit model with different circuit element values. Our large signal model is unique that the same circuit can be used for both small and large signal analysis. With large signal model the optical power induced bandwidth improvement and output photocurrent saturation are explained. Large signal model is validated through linearity and IP3 analysis which found close agreement with the measured results.
机译：根据积分载流子密度速率方程建立了单行进载流光电二极管（UTC-PD）的等效电路模型，并通过采用先进的器件物理技术来评估器件的一些重要性能，如电学和光学特性。电路模型非常简单地结合了器件的芯片和封装寄生特性，以提供UTC-PD的实际性能。我们已经开发了小信号交流电路模型，该模型可用于分析器件的低功率调制特性，而直流电路模型则有助于相当准确地找到与波长相关的响应度。在高光输入功率下，发现设备带宽通过增强吸收区域中的自感应场而增加，并且当吸收宽度较大时，可以从设备获得高输出功率。这种情况要求进行大信号分析。我们通过将很少的数学转换与具有不同电路元件值的小信号电路模型相结合，开发了大信号电路模型。我们的大信号模型是独一无二的，同一电路可用于大小信号分析。对于大信号模型，将说明光功率引起的带宽改善和输出光电流饱和。大信号模型通过线性和IP3分析进行了验证，发现与测量结果非常吻合。

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  • 来源
    《Optical and quantum electronics》 |2017年第11期|374.1-374.24|共24页
  • 作者

    Senjuti Khanra; Ipsita Sengupta; Abhirup Das Barman;

  • 作者单位

    Institute of Radio Physics and Electronics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata, W.B 700009, India,ITRA Project 'Mobile Broadband Service Support over Cognitive Radio Networks', IRPE-CU, Kolkata, India;

    Govt. College of Engineering and Leather Technology, Block LB, Sector-III, Saltlake City, Kolkata 700098, India;

    Institute of Radio Physics and Electronics, University of Calcutta, 92, Acharya Prafulla Chandra Road, Kolkata, W.B 700009, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photonic transmitter; Responsivity; Circuit model; Photodiodes;

    机译：光子发射器;响应能力电路模型;光电二极管;

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