Temperature-dependent modulated reflectance and photoluminescence of InAs-GaAs and InAs-InGaAs-GaAs quantum dot heterostructures

著录项

• 来源
  《Optical and quantum electronics》 |2016年第3期|202.1-202.6|共6页
• 作者

  Andrius Rimkus; Evelina Pozingyte; Ramunas Nedzinskas; Bronislovas Cechavicius; Julius Kavaliauskas; Gintaras Valusis; Lianhe Li; Edmund H. Linfield;

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• 作者单位

  Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto 11, 01108 Vilnius, Lithuania;

  Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto 11, 01108 Vilnius, Lithuania;

  Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto 11, 01108 Vilnius, Lithuania;

  Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto 11, 01108 Vilnius, Lithuania;

  Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto 11, 01108 Vilnius, Lithuania;

  Semiconductor Physics Institute of Center for Physical Sciences and Technology, A. Gostauto 11, 01108 Vilnius, Lithuania;

  School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK;

  School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  InAs quantum dots; Modulated reflectance; Photoluminescence; Optical transitions; Electronic structure;

  机译：InAs量子点;调制反射率;光致发光;光学跃迁;电子结构;