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Negative reflection in GaP single crystals

机译:GaP单晶中的负反射

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摘要

An experimental work focused on measurement of reflection coefficient of GaP single crystal specimens in the exciton resonance region is described. Occurrence of negative reflection in the specimen with a thickness of 100 μm and initial concentration of charge carriers of 10~(15) cm~(-3) over a wavelength interval spanning from 0.54 to 0.81 μm (from 1.52 to 2.30 eV) has been detected. Irradiation of the specimen by fast electrons with a dose of 10~(16) e/cm~2 enhances negative reflection. Negative reflection is attributed to the formation of surface excitons with negative effective mass.
机译:描述了集中在激子共振区中GaP单晶样品反射系数测量的实验工作。在波长范围从0.54到0.81μm(从1.52到2.30 eV)的厚度为100μm的样品和10〜(15)cm〜(-3)的载流子初始浓度中发生负反射检测到。快电子以10〜(16)e / cm〜2的剂量照射样品会增强负反射。负反射归因于有效负质量的表面激子的形成。

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