Simulation of full-color Ⅲ-nitride LED with intermediate carrier blocking layers

Mikhail V. Kisin; Denis V. Mamedov; Hussein S. El-Ghoroury

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Simulation of full-color Ⅲ-nitride LED with intermediate carrier blocking layers

机译：具有中间载流子阻挡层的全色Ⅲ族氮化物LED的仿真

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摘要

Intermediate carrier blocking layers (ICBLs) adjacent to optically active quantum wells (QWs) are used for tailoring the output color spectra in multi-color Ⅲ-nitride light-emitting diode (LED). We show that the ICBL active region design can efficiently balance the initially asymmetric supply of electrons and holes to optically active QWs and provide tunable LED emission in full visible optical range.

机译：与光学活性量子阱（QW）相邻的中间载流子阻挡层（ICBL）用于调整多色Ⅲ型氮化物发光二极管（LED）的输出色谱。我们表明，ICBL有源区设计可以有效平衡电子和空穴对光学有源QW的初始不对称供应，并在整个可见光范围内提供可调的LED发射。

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来源
《Optical and quantum electronics》 |2016年第12期|525.1-525.9|共9页
作者
Mikhail V. Kisin; Denis V. Mamedov; Hussein S. El-Ghoroury;
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作者单位

Ostendo Technologies Inc., 6185 Paseo del Norte, Carlsbad, CA 92011, USA;

Ostendo Technologies Inc., 6185 Paseo del Norte, Carlsbad, CA 92011, USA;

Ostendo Technologies Inc., 6185 Paseo del Norte, Carlsbad, CA 92011, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
LED; MQW; Color-coded structures; Inhomogeneous injection; Tunable emission;

机译：发光二极管;MQW;颜色编码的结构;不均匀注射;可调发射;

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专利

1. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers [J] . Hussein S. El-Ghoroury, Milton Yeh, J. C. Chen, AIP Advances . 2016,第7期

机译：具有中间载流子阻挡层的单片全色GaN基LED的生长
2. Misfit dislocation blocking by dilute nitride intermediate layers [J] . J. Schoene, E. Spiecker, F. Dimroth, Applied Physics Letters . 2008,第8期

机译：稀氮化物中间层对错配位错的阻挡
3. Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers [J] . Kenjo Matsui, Koji Yamashita, Mitsuru Kaga, Japanese journal of applied physics . 2013,第8issue2期

机译：基于氮化物的发光二极管中的载流子注入，其中包括两个带有掺杂中间层的有源区
4. Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers [C] . K. Hayashi, T. Yasuda, S. Katsuno, Materials Research Society Meeting . 2014

机译：基于氮化物的LED中的电子溢流的评估通过电子阻挡层的极化电荷影响
5. Quantum chemical simulations of atomic layer deposition of metal oxides and metal nitrides. [D] . Xu, Ye. 2006

机译：金属氧化物和金属氮化物原子层沉积的量子化学模拟。
6. Enhanced performance of nitride-based ultraviolet vertical-injection light-emitting diodes by non-insulation current blocking layer and textured surface [O] . Yen Chih Chiang, Bing Cheng Lin, Kuo Ju Chen, 2014

机译：非绝缘电流阻挡层和带纹理的表面增强了氮化物基紫外垂直注入发光二极管的性能
7. Growth of monolithic full-color GaN-based LED with intermediate carrier blocking layers [O] . Hussein S. El-Ghoroury, Milton Yeh, J. C. Chen, 2016

机译：具有中间载体阻塞层的单片全彩GaN的生长

Simulation of full-color Ⅲ-nitride LED with intermediate carrier blocking layers

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