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首页> 外文期刊>Optical and quantum electronics >The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films
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The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

机译：Ce掺杂对射频溅射ZnO薄膜结构和光电性能的影响

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摘要

Using X-ray diffraction, UV-Visible spectroscopy, XPS and photolumines-cence (PL) measurements, the structural, optical and electronic properties of ZnO and Ce-doped ZnO thin films were investigated; the films were deposited on glass substrates by RF reactive-magnetron sputtering and post-annealed at 300 ℃ in an oxygen atmosphere. Under similar deposition conditions, both films crystallized into hexagonal wuerzite lattice structures. The pure ZnO film exhibited a c-axis preferential orientation, whereas the Ce-doped exhibited an a-axis preferential orientation. The films display uniform textured surfaces with columnar-like microstructures. The UV-Vis spectra showed high transparencies of 90 % on average for both films. Band gaps of E_g = 3.23 eV and E_g = 3.27 eV for pure and Ce-doped film, respectively, were measured. The doped film spectrum was shifted to the blue as a result of the Burstein-Moss effect. The XPS spectra show that the VB edge of the doped film shifts toward lower binding energy, at ～ 1.3 eV below E_F, while the VB edge of the pure film is located at ～2.0 eV below E_F. Additionally, Ce~(3+) and Ce~(4+) ions coexist in the ZnO matrix in fractions of ～ 70 and ～ 30 %, respectively. The PL spectra show that both types of ions induce extra electron states that allow multiple emission peaks in the blue-green region.
机译：利用X射线衍射，紫外可见光谱，XPS和光致发光（PL）测量，研究了ZnO和Ce掺杂ZnO薄膜的结构，光学和电子性能。薄膜通过射频反应磁控溅射沉积在玻璃基板上，并在氧气气氛中于300℃进行后退火。在相似的沉积条件下，两个膜均结晶为六方晶的锆石晶格结构。纯ZnO膜表现出c轴优先取向，而掺杂Ce表现出a轴优先取向。薄膜显示出具有圆柱状微结构的均匀纹理表面。 UV-Vis光谱显示两张薄膜的平均透明性均高达90％。对于纯膜和掺Ce膜，分别测量E_g = 3.23 eV和E_g = 3.27 eV的带隙。由于Burstein-Moss效应，掺杂的薄膜光谱变为蓝色。 XPS光谱表明，掺杂薄膜的VB边缘在E_F以下〜1.3 eV处向较低的结合能移动，而纯薄膜的VB边缘在E_F下方〜2.0 eV处。另外，Ce〜（3+）和Ce〜（4+）离子分别以〜70％和〜30％的比例共存于ZnO基体中。 PL光谱表明，两种类型的离子均会感应出额外的电子态，从而在蓝绿色区域内产生多个发射峰。

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  • 来源
    《Optical and quantum electronics》 |2015年第8期|2637-2648|共12页
  • 作者

    Manuel Garcia-Mendez; Ricardo Rangel Segura; Victor Coello; Eduardo Martinez Guerra; Alvaro Bedoya-Calle;

  • 作者单位

    CICFIM de la FCFM-UANL, Manuel L. Barragan S/N, Cd. Universitaria, CP. 66450 San Nicolas de los Garza, N.L., Mexico;

    Division de Estudios de Posgrado, Facultad de Ingenieria Quimica, UMSNH, Francisco j. Mujica S/N, CP. 58030 Morelia, Mich., Mexico;

    CICESE Unidad Monterrey, Alianza Sur 203, Parque PIIT, CP. 66600 Apodaca, N.L., Mexico;

    Centro de Investigacion en Materiales Avanzados, S.C. (CIMAV), Av. Alianza Norte #202, PIIT, Nueva Carretera Aeropuerto Km. 10, CP. 66600 Apodaca, N.L., Mexico;

    FIME de la UANL, Av. Universidad S/N, Cd. Universitaria, CP. 66450 San Nicolas de los Garza, N.L., Mexico;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Zinc oxide films; RF sputtering; Optical properties; Electronic properties;

    机译：氧化锌膜;射频溅射光学性质;电子特性;

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