Influence of trap filling and junction capacitance charging on photovoltage transients in HgCdTe-based infrared photodiode

著录项

• 来源
  《Optical and quantum electronics》 |2014年第8期|1049-1054|共6页
• 作者

  Haoyang Cui; Yongpeng Xu; Wei Gao; Can Liu; Jialin Wang; Chaoqun Wang; Junjie Yang; Zhong Tang;

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• 作者单位

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

  School of electronic and information engineering, Shanghai University of Electric Power,2013 Pingliang Road, Shanghai 200090, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  HgCdTe-based infrared photodiode; Transient photovoltage; Time constant; Junction capacitance; Carrier trap;

  机译：基于HgCdTe的红外光电二极管;瞬态光电压;时间常数;结电容;载气阱;