机译:混合晶体Nd:Lu_(0.15)Y_(0.85)VO_4,Nd:Lu_(0.5)Y_(0.5)VO_4和Nd:Lu_(0.33)Y_(0.37)Gd_(0.3)VO_4的被动调Q激光性能GaAs饱和吸收体
School of Information Science and Engineering, Shandong University, Jinan 250100, China;
School of Information Science and Engineering, Shandong University, Jinan 250100, China;
School of Information Science and Engineering, Shandong University, Jinan 250100, China;
School of Information Science and Engineering, Shandong University, Jinan 250100, China;
School of Information Science and Engineering, Shandong University, Jinan 250100, China;
School of Information Science and Engineering, Shandong University, Jinan 250100, China;
College of Chemistry and Chemical Engineering, Fuzhou University, Fuzhou 350108, China;
mixed crystals; passive Q-switch; pulse width; pulsed peak power;
机译:具有声光调制器和GaAs饱和吸收器的双Q开关和锁模Nd:Lu_(0.33)Y_(0.37)Gd_(0.3)VO_4和Nd:Lu_(0.5)Y_(0.5)VO_4激光器的性能
机译:使用单壁碳纳米管可饱和吸收体的二极管泵浦被动Q开关Nd:Lu_(0.33)Y_(0.37)Gd_(0.3)VO_4激光器
机译:Nd:Lu_(0.15)Y_(0.85)VO_4的连续波和被动调Q激光性能
机译:YB的生长和热表征:Y_(0.923)LU_(0.071)VO_4
机译:$ Bi ^ {3 +} $的起源-相关的发光中心位于$ Lu_ {3} Al_ {5} O_ {12} $:Bi和$ Y_ {3} Al_ {5} O_ {12} $:Bi单晶电影及其松弛激发态的结构