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A computational study of nonparabolic conduction band effect on quantum wire transport (e.g. GaN)

机译：非抛物线导带效应对量子线传输（例如GaN）的计算研究

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摘要

We studied the physics insight the GaN (example) quantum wire FET transistors. The model is based on the four k·p Kane band model. We have introduced closed compact model for the Einstein relation of the diffusivity to mobility ratio (DMR) in quantum wires. The model can be applied for both wide and narrow band gaps of nonparabolic conduction band dispersion. The model is related to the optical matrix elements between conduction and valence bands. We have used ID electrostatic to model the electron density over the maximum energy point. We have studied the effects of gate-to-source and drain-to-source voltages on the DMR by calculating the electron density using flux theory. We observed that above the threshold the non-parabolic dispersion increases the DMR. Additionally, we have studied the nonparabolic effects on the Fermi level and found that for low doping concentrations, the nonparabolic effect must be considered and an accurate calculation for the optical matrix elements is needed.
机译：我们研究了GaN（示例）量子线FET晶体管的物理洞察力。该模型基于四k·p凯恩带模型。我们介绍了量子线中扩散率与迁移率（DMR）的爱因斯坦关系的封闭紧模型。该模型可用于非抛物线型导带色散的宽带隙和窄带隙。该模型与导带和价带之间的光学矩阵元素有关。我们已经使用ID静电来模拟最大能量点上的电子密度。通过使用通量理论计算电子密度，我们已经研究了栅源电压和漏源电压对DMR的影响。我们观察到，在阈值以上，非抛物线色散会增加DMR。此外，我们研究了费米能级上的非抛物线效应，发现对于低掺杂浓度，必须考虑非抛物线效应，并且需要对光学矩阵元素进行准确的计算。

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  • 来源
    《Optical and quantum electronics》 |2013年第8期|885-899|共15页
  • 作者

    Hamdy Abd Elhamid; Y. Ismail; M. J. Deen;

  • 作者单位

    Center for Nanoelectronics and Devices (CND), Zewail City of Science and Technology, Sheikh Zayed district, 12588, 6th October City, Giza, Egypt,Center of Nanoelectronics and devices (CND), American University in Cairo, Cairo, Egypt;

    Center for Nanoelectronics and Devices (CND), Zewail City of Science and Technology, Sheikh Zayed district, 12588, 6th October City, Giza, Egypt,Center of Nanoelectronics and devices (CND), American University in Cairo, Cairo, Egypt;

    Electrical and Computer Engineering Department (CRL 226), McMaster University, Hamilton , ON L8S 4K1, Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Quantum; Quantum wire; GaN; DMR; Nonparabolic Conduction Band; Kane model; Compact model;

    机译：量子;量子线;氮化镓;DMR;非抛物线导带;凯恩模型紧凑型;

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