Towards Si-based electrically injected group-IV lasers

Greg Sun

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Towards Si-based electrically injected group-IV lasers

机译：迈向基于硅的电注入IV组激光器

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摘要

Approaches towards Si-based lasers are discussed using lattice-matched group-Ⅳ heterostructures that can be deposited strain free on Si substrates with either Ge or GeSn buffer layers. Several strain-free designs are presented that include Ge/GeSiSn quantum cascade structure, GeSn/GeSiSn double heterostructure, and GeSn/GeSiSn multiple quantum wells.

机译：使用晶格匹配的Ⅳ族异质结构讨论了基于Si的激光器的方法，该结构可以在具有Ge或GeSn缓冲层的Si衬底上无应变地沉积。提出了几种无应变设计，包括Ge / GeSiSn量子级联结构，GeSn / GeSiSn双异质结构和GeSn / GeSiSn多量子阱。

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来源
《Optical and quantum electronics》 |2012年第13期|p.563-573|共11页
作者
Greg Sun;
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作者单位

Department of Physics, University of Massachusetts Boston, Boston, MA 02125, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
group-Ⅳ; Si based laser; germanium tin; germanium silicon tin;

机译：Ⅳ组硅基激光器;锗锡锗硅锡;

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1. Electrical and optical switching in the bistable regime of an electrically injected polariton laser [J] . M. Klaas, H. Sigurdsson, T. C. H. Liew, Physical Review. B, Condensed Matter . 2017,第4期

机译：电注入极化子激光器的双稳态状态下的电光切换
2. Electrical and optical switching in the bistable regime of an electrically injected polariton laser [J] . Klaas M., Sigurdsson H., Liew T. C. H., Physical review, B . 2017,第4期

机译：电子和光学切换在电注入的Polariton激光器的双稳态状态下
3. Electrical and optical switching in the bistable regime of an electrically injected polariton laser [J] . M. Klaas, H. Sigurdsson, T. C. H. Liew, Physical Review. B, Condensed Matter . 2017,第3a4CD期

机译：电子和光学切换在电注入的Polariton激光器的双稳态状态下
4. Towards Si-based electrically injected group-IV lasers [C] . Sun Greg 2011 ICO International conference on information photonics . 2011

机译：迈向基于Si的电注入IV组激光器
5. Engineering of Electrically Injected AlGaN-based UVC Lasers [D] . Guo, Qiang. 2019

机译：电注入的基于Algan的UVC激光器的工程
6. Controlled growth of Si-based heterostructure nanowires and their structural and electrical properties [O] . Guanghan Qian, Saadah Abdul Rahman, Boon Tong Goh 2015

机译：硅基异质结构纳米线的受控生长及其结构和电性能
7. Parity-Time Symmetry: Electrically Injected Parity Time-Symmetric Single Transverse-Mode Lasers (Laser Photonics Rev. 13(1)/2019) [O] . Ruizhe Yao, Chi-Sen Lee, Viktor Podolskiy, 2019

机译：奇偶校验时间对称：电注入奇偶校验时间对称单横横模式激光器（激光光子仪Rev.13（1）/ 2019）

Towards Si-based electrically injected group-IV lasers

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