Importance of non linear piezoelectric effect in Wurtzite Ⅲ-N semiconductors

著录项

• 来源
  《Optical and quantum electronics》 |2012年第5期|p.195-203|共9页
• 作者

  Joydeep Pal; Geoffrey Tse; Vesel Haxha; Max A. Migliorato; Stanko Tomic;

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• 作者单位

  School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK;

  School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK;

  School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK;

  School of Electrical and Electronic Engineering, University of Manchester, Manchester, UK;

  Joule Physics Laboratory, School of Computing, Sciences and Engineering,University of Salford, Salford, UK;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  piezoelectricity; Ⅲ-nitrides; semiconductors; wurtzite structures;

  机译：压电;Ⅲ-氮化物;半导体;纤锌矿结构;