Detectivity simulation of long-wavelength quantum well infrared photodetectors

著录项

• 来源
  《Optical and quantum electronics》 |2011年第13期|p.817-826|共10页
• 作者

  D. Y. Xiong; W. Y. Qiu; S. Q. Zhu; Q. C. Weng; L. Li; J. Wen;

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• 作者单位

  Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

  Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

  Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

  Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

  Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

  Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University,Shanghai 200241, China;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  LW-QWIPs; electrical field distribution; currents; detectivity;

  机译：LW-QWIP;电场分布;电流侦探性;