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首页> 外文期刊>Optical and quantum electronics >Numerical study on optical and electrical properties of strained GalnSb/GalnAlSb mid-infrared quantum well laser
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Numerical study on optical and electrical properties of strained GalnSb/GalnAlSb mid-infrared quantum well laser

机译：GalnSb / GalnAlSb应变中红外量子阱激光器的光学和电学特性的数值研究

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摘要

The optical and electrical properties of compressively strained GalnSb/ GalnAlSb mid-infrared quantum well lasers are numerically studied solving one-dimensional Schrodinger equation using finite difference method. The simulation results demonstrate that band-mixing effects and effective mass of hole are reduced when the well is compressively strained. The strain-dependent optical and differential gains are evaluated for 0.6, 0.9, 1.21, and 1.52% compressively strained quantum well and found maximum when well is strained by 1.52%. The emission wavelength for the proposed laser can be tuned from 2.40 to 2.26 μm due to change in compressive strain from 0.60 to 1.52% at temperature 300 K. For the range of strain, the shift in wavelength is found from 2.38 to 2.24 μm at temperature 275 K. The results obtained from PSPICE simulation indicate that, the optical output power and threshold current are strongly depend on the number of wells and found to be almost constant for the number of wells three and above.
机译：通过有限差分法求解一维Schrodinger方程，对压缩应变的GalnSb / GalnAlSb中红外量子阱激光器的光学和电学性质进行了数值研究。仿真结果表明，当井受到压缩应变时，带的混合效果和有效孔质量会降低。对于0.6、0.9、1.21和1.52％的压缩应变量子阱，评估了应变相关的光学和微分增益，当阱应变为1.52％时发现最大值。由于在300 K的温度下压缩应变从0.60到1.52％的变化，建议的激光器的发射波长可以从2.40调整到2.26μm。对于应变范围，在温度范围内发现波长的偏移从2.38到2.24μm 275K。从PSPICE模拟获得的结果表明，光输出功率和阈值电流在很大程度上取决于孔的数量，并且发现对于三个及以上的孔数量几乎是恒定的。

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